MT47H64M8CB-3:B Micron Technology Inc, MT47H64M8CB-3:B Datasheet - Page 32

• Manufacturer Part Number: MT47H64M8CB-3:B
• Description: IC DDR2 SDRAM 512MBIT 3NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-3:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 7:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
Current State
Any
Idle
Row Activating,
Active, or
Precharging
Read (auto
precharge
disabled
Write (auto
precharge
disabled.)
Read (with auto-
precharge)
Write (with auto-
precharge)
Truth Table – Current State Bank n - Command to Bank m
Notes: 1–6; notes appear below and on next page
Notes:
CS#
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
1. This table applies when CKEn - 1 was HIGH and CKEn is HIGH and after
2. This table describes alternate bank operation, except where noted (i.e., the current state is
3. Current state definitions:
RAS#
(if the previous state was self refresh).
for bank n and the commands shown are those allowed to be issued to bank m, assuming
that bank m is in such a state that the given command is allowable). Exceptions are covered
in the notes below.
Idle:
Row active: A row in the bank has been activated and
Read:
Write:
X
H
X
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
CAS#
X
H
X
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
complete.
accesses and no register accesses are in progress.
A READ burst has been initiated with auto precharge disabled, and has not
yet terminated.
A WRITE burst has been initiated, with auto precharge disabled, and has not
yet terminated.
The bank has been precharged,
WE#
X
H
X
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
DESELECT (NOP/continue previous operation)
NO OPERATION (NOP/continue previous operation)
Any command otherwise allowed to bank m
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE
32
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Command/Action
512Mb: x4, x8, x16 DDR2 SDRAM
t
RP has been met, and any READ burst is
t
RCD has been met. No data bursts/
Command Truth Tables
©2004 Micron Technology, Inc. All rights reserved.
t
XSNR has been met
Notes
7, 9, 3
7, 9
7, 8
7, 3
7, 3
7, 3
7
7
7
7