MT46H8M16LFCF-10 Micron Technology Inc, MT46H8M16LFCF-10 Datasheet - Page 64

• Manufacturer Part Number: MT46H8M16LFCF-10
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M16LFCF-10

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 15b
• Access Time (max): 7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 90mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 41:
PDF: 09005aef8199c1ec/Source: 09005aef81a19319
MT46H8M16LF_1.fm - Rev. K 7/07 EN
COMMAND
BA0, BA1
A0-A9
DQS
DQ
A11
CK#
CKE
A10
DM
CK
1
4
Bank Write – with Auto Precharge
t
t
IS
IS
NOP 5
T0
t
Notes:
t
IH
IH
t
IS
t
Bank x
IS
1. DI b= data-out from column n.
2. BL = 4 in the case shown.
3. Disable auto precharge.
4. PRE = PRECHARGE, ACT = ACTIVE, RA = Row address, BA = Bank address.
5. NOP commands are shown for ease of illustration; other commands may be valid at these
6.
7.
ACT
T1
RA
RA
RA
t
t
IH
times.
t
t
IH
DSH is applicable during
DSH is applicable during
t
CK
t
t
RCD
RAS
NOP 5
T2
t
CH
t CL
t
WRITE 2
IS
Bank x
3
Col n
T3
t
t
IH
DQSS (NOM)
t
t
DQSS (MIN) and is referenced from CK T4 or T5.
DQSS (MIN) and is referenced from CK T5 or T6.
t
WPRES
64
t
DS
t
WPRE
NOP 5
T4
DI
b
128Mb: 8 Meg x 16 Mobile DDR SDRAM
t
DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T4n
t
DQSL
NOP 5
T5
t
DQSH
T5n
t
WPST
NOP 5
T6
©2004 Micron Technology, Inc. All rights reserved.
Timing Diagrams
t
WR
NOP 5
T7
TRANSITIONING DATA
DON’T CARE
NOP 5
T8
t
RP