MT46H8M16LFCF-10 Micron Technology Inc, MT46H8M16LFCF-10 Datasheet - Page 42

• Manufacturer Part Number: MT46H8M16LFCF-10
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M16LFCF-10

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 15b
• Access Time (max): 7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 90mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Truth Tables
Table 8:
PDF: 09005aef8199c1ec/Source: 09005aef81a19319
MT46H8M16LF_1.fm - Rev. K 7/07 EN
CKE
H
H
H
H
H
L
L
L
L
L
L
n-1
CKE
H
H
H
H
H
L
L
L
L
L
L
Truth Table – CKE
Notes: 1–5
n
(Precharge) Power-Down
(Precharge) Power-Down
Notes:
(Active) Power-Down
(Active) Power-Down
Current State
Bank(s) active
All banks idle
All banks idle
Self refresh
Self refresh
1. CKE
2. Current state is the state of the DDR SDRAM immediately prior to clock edge n.
3. COMMAND
4. All states and sequences not shown are illegal or reserved.
5.
6. DESELECT or NOP commands should be issued on any clock edges occurring during the
7. The clock must toggle at least once during the
8. DESELECT or NOP commands should be issued on any clock edges occurring during the
9. The clock must toggle at least once during the
edge.
COMMAND
t
period.
period.
CKE pertains.
n
is the logic state of CKE at clock edge n
n
n
.
is the command registered at clock edge n
See Table 10 on page 45
See Table 10 on page 45
DESELECT or NOP
DESELECT or NOP
DESELECT or NOP
DESELECT or NOP
DESELECT or NOP
AUTO REFRESH
COMMAND
X
X
X
42
n
128Mb: 8 Meg x 16 Mobile DDR SDRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
; CKE
Maintain (precharge) power-down
t
t
XP period.
XSR period.
n-1
(Precharge) power-down entry
Maintain (active) power-down
Exit (precharge) power-down
(Active) power-down entry
Exit (active) power-down
was the state of CKE at the previous clock
Maintain self refresh
,
and ACTION
Self refresh entry
Exit self refresh
ACTION
©2004 Micron Technology, Inc. All rights reserved.
n
n
is a
result of
Truth Tables
Notes
6, 7
6, 7
8, 9
t
t
XSR
XP