MT46H8M16LFCF-10 Micron Technology Inc, MT46H8M16LFCF-10 Datasheet - Page 32

• Manufacturer Part Number: MT46H8M16LFCF-10
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M16LFCF-10

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 15b
• Access Time (max): 7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 90mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 19:
Figure 20:
PDF: 09005aef8199c1ec/Source: 09005aef81a19319
MT46H8M16LF_1.fm - Rev. K 7/07 EN
Consecutive WRITE-to-WRITE
Nonconsecutive WRITE-to-WRITE
Notes:
Notes:
t
1. D
2. An uninterrupted burst of 4 is shown.
3. Each WRITE command may be to any bank.
t
1. D
2. An uninterrupted burst of 4 is shown.
3. Each WRITE command may be to any bank.
DQSS (NOM)
DQSS (NOM)
COMMAND
COMMAND
ADDRESS
ADDRESS
IN
IN
DQS
b (n) = data-in for column b (n).
b (n) = data-in for column b (n).
CK#
DM
DQ
DQS
CK
CK#
DM
DQ
CK
WRITE
Bank,
Col b
WRITE
T0
Bank,
Col b
T0
t
DQSS
t
DQSS
NOP
D
T1
b
NOP
IN
D
T1
b
IN
32
T1n
b+1
D
T1n
b + 1
IN
D
IN
128Mb: 8 Meg x 16 Mobile DDR SDRAM
WRITE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Bank,
Col n
b+2
D
T2
NOP
b + 2
IN
T2
D
IN
T2n
b+3
D
T2n
b + 3
IN
D
IN
T3
NOP
D
WRITE
Bank,
n
Col n
T3
IN
DON’T CARE
DON’T CARE
T3n
n+1
D
IN
©2004 Micron Technology, Inc. All rights reserved.
T4
D
n+2
NOP
D
IN
T4
NOP
n
IN
TRANSITIONING DATA
TRANSITIONING DATA
T4n
D
n+3
T4n
n + 1
D
IN
IN
Operations
T5
NOP
n + 2
D
T5
NOP
IN
T5n
n + 3
D
IN