MT46H8M16LFCF-10 Micron Technology Inc, MT46H8M16LFCF-10 Datasheet - Page 60

• Manufacturer Part Number: MT46H8M16LFCF-10
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M16LFCF-10

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 15b
• Access Time (max): 7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 90mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 37:
PDF: 09005aef8199c1ec/Source: 09005aef81a19319
MT46H8M16LF_1.fm - Rev. K 7/07 EN
COMMAND
Self Refresh Mode
Notes:
ADDR
CKE
DQS
CK#
DM
CK
DQ
1
1
4
1. Clock must be stable before exiting self refresh mode. That is, the clock must be cycling
2. Device must be in the all banks idle state prior to entering self refresh mode.
3. NOPs or DESELECT are required for
4. AR = AUTO REFRESH command.
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within specifications by Ta0.
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AR
T1
Enter self refresh mode
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128Mb: 8 Meg x 16 Mobile DDR SDRAM
XSR time with at least two clock pulses.
Ta0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
(1)
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NOP
Ta1
Exit self refresh mode
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©2004 Micron Technology, Inc. All rights reserved.
VALID
VALID
Tb0
DON’T CARE
Timing Diagrams
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