MT46H8M16LFCF-10 Micron Technology Inc, MT46H8M16LFCF-10 Datasheet - Page 38

• Manufacturer Part Number: MT46H8M16LFCF-10
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M16LFCF-10

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 15b
• Access Time (max): 7ns
• Maximum Clock Rate: 104MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 90mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 26:
PDF: 09005aef8199c1ec/Source: 09005aef81a19319
MT46H8M16LF_1.fm - Rev. K 7/07 EN
COMMAND
ADDRESS
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
WRITE-to-PRECHARGE – Interrupting
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Notes:
Bank a ,
WRITE
Col b
T0
t
t
t
DQSS
DQSS
DQSS
1. D
2. An interrupted burst of 8 is shown.
3.
4. A10 is LOW with the WRITE command (auto precharge is disabled).
5. PRE = PRECHARGE command.
6. DQS is required at T4 and T4n (nominal case) to register DM.
7. If a burst of 4 was used, DQS and DM would not be required at T3, T3n, T4, and T4n.
t
WR is referenced from the first positive CK edge after the last data-in pair.
IN
D
b = data-in for column b.
b
IN
NOP
D
T1
b
IN
D
b+1
D
b
IN
IN
T1n
b+1
D
IN
b+1
D
IN
NOP
T2
T2n
38
t
T3
NOP
WR
128Mb: 8 Meg x 16 Mobile DDR SDRAM
T3n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
PRE
T4
5
DON’T CARE
T4n
T5
NOP
TRANSITIONING DATA
©2004 Micron Technology, Inc. All rights reserved.
T6
NOP
Operations