MT41J64M16LA-187E:B TR Micron Technology Inc, MT41J64M16LA-187E:B TR Datasheet - Page 57
![IC DDR3 SDRAM 1GBIT 96FBGA](/photos/7/23/72317/mfg557-60-fbga_sml.jpg)
MT41J64M16LA-187E:B TR
Manufacturer Part Number
MT41J64M16LA-187E:B TR
Description
IC DDR3 SDRAM 1GBIT 96FBGA
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Specifications of MT41J64M16LA-187E:B TR
Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
1G (64M x 16)
Speed
533MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
96-FBGA
Organization
64Mx16
Density
1Gb
Address Bus
16b
Maximum Clock Rate
1.066GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
265mA
Pin Count
96
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1378-2
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Table 41:
Alternative 40Ω Driver
Table 42:
40Ω Driver Output Sensitivity
Table 43:
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_3.fm - Rev. F 11/08 EN
MR1[5,1]
R
R
R
Pull-up/pull-down mismatch (MM
ON
ON
ON
0,0
@ 0.8 × V
@ 0.5 × V
@ 0.2 × V
Symbol
34Ω Output Driver Voltage and Temperature Sensitivity
40Ω Driver Impedance Characteristics
40Ω Output Driver Sensitivity Definition
DD
DD
DD
R
40Ω
ON
Q
Q
Q
Notes:
Notes:
0.9 - dR
0.9 - dR
0.9 - dR
1. Tolerance limits assume RZQ of 240Ω (±1 percent) and are applicable after proper ZQ cali-
2. Measurement definition for mismatch between pull-up and pull-down (MM
If either the temperature or the voltage changes after I/O calibration, the tolerance limits
listed in Table 42 can be expected to widen according to Table 43 and Table 44 on
page 58.
1. ΔT = T - T(@ calibration), ΔV = V
Resistor
R
R
bration has been performed at a stable temperature and voltage (V
Refer to "40W Driver Output Sensitivity" on page 57 if either the temperature or the volt-
age changes after calibration.
both R
ON 40PD
ON 40PU
ON
ON
ON
dR
dR
dR
dR
dR
dR
PUPD
dTM × |ΔT| - dR
Change
MM
dTH × |ΔT| - dR
dTL × |ΔT| - dR
ON
ON
ON
ON
ON PU
ON
ON
)
dVM
dTM
dVH
dTH
dVL
dTL
P UP D
Min
and R
0.2 × V
0.5 × V
0.8 × V
0.2 × V
0.5 × V
0.8 × V
0.5 × V
V
=
ON PD
OUT
ON
ON
ON
R
------------------------------------ -
DD
DD
DD
DD
DD
DD
DD
ON
dVH × |ΔV|
dVM × |ΔV|
dVL × |ΔV|
R
Q
Q
Q
Q
Q
Q
Q
at 0.5 × V
ON
P U
–
Nom
57
Min
R
–10%
DD
0
Min
0
0
0
0
0
0.6
0.9
0.9
0.9
0.9
0.6
ON
DD
Q - V
Q:
P D
x
1.1 + dR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1.1 + dR
DD
100
1.1 + dR
Q(@ calibration), and V
Nom
ON
n/a
1.0
1.0
1.0
1.0
1.0
1.0
ON
ON
1Gb: x4, x8, x16 DDR3 SDRAM
dTM × |ΔT| + dR
dTH × |ΔT| + dR
dTL × |ΔT| + dR
Max
0.13
0.13
0.13
1.5
1.5
1.5
Output Driver Impedance
Max
Max
1.1
1.1
1.4
1.4
1.1
1.1
10
©2006 Micron Technology, Inc. All rights reserved.
ON
ON
ON
DD
dVH × |ΔV|
dVM × |ΔV|
dVL × |ΔV|
DD
= V
Q = V
DD
RZQ/6
RZQ/6
RZQ/6
RZQ/6
RZQ/6
RZQ/6
Units
Q.
%
DD
PUPD
%/mV
%/mV
%/mV
Units
%/°C
%/°C
%/°C
, V
). Measure
SS
Q = V
RZQ/6
RZQ/6
RZQ/6
Units
Notes
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
SS
).
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