PESD12VS2UAT T/R NXP Semiconductors, PESD12VS2UAT T/R Datasheet - Page 9

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PESD12VS2UAT T/R

Manufacturer Part Number
PESD12VS2UAT T/R
Description
TVS Diode Arrays 12V DUAL ESD PROTECT
Manufacturer
NXP Semiconductors
Series
PESDxS2UATr
Datasheet

Specifications of PESD12VS2UAT T/R

Product Category
TVS Diode Arrays
Rohs
yes
Polarity
Unidirectional
Channels
2 Channels
Breakdown Voltage
15 V
Clamping Voltage
35 V
Operating Voltage
12 V
Peak Surge Current
5 A
Mounting Style
SMD/SMT
Termination Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Capacitance
75 pF
Dimensions
1.4 (Max) mm W x 3 (Max) mm L
Package / Case
SOT-23
Peak Pulse Power Dissipation
180 W
Factory Pack Quantity
3000
Part # Aliases
PESD12VS2UAT,215
NXP Semiconductors
2004 Feb 18
Double ESD protection diodes
in SOT23 package
GND
GND
Note 1: IEC61000-4-2 network
unclamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
unclamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
C
Z
ESD TESTER
= 150 pF; R
C
R
Z
Z
note 1
Z
= 330 Ω
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div
Fig.9 ESD clamping test set-up and waveforms.
D.U.T.: PESDxS2UAT
450 Ω
50 Ω coax
RG 223/U
9
GND
GND
GND
GND
GND
GND
clamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
clamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
ATTENUATOR
10×
PESDxS2UAT series
PESD24VS2UAT
PESD15VS2UAT
PESD12VS2UAT
PESD3V3S2UAT
PESD5V0S2L
vertical scale = 20 V/div
horizontal scale = 50 ns/div
vertical scale = 10 V/div
horizontal scale = 50 ns/div
OSCILLOSCOPE
4 GHz DIGITAL
Product data sheet
50 Ω
001aaa151

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