PESD12VS2UAT T/R NXP Semiconductors, PESD12VS2UAT T/R Datasheet - Page 5

• Manufacturer Part Number: PESD12VS2UAT T/R
• Description: TVS Diode Arrays 12V DUAL ESD PROTECT
• Manufacturer: NXP Semiconductors
• Series: PESDxS2UATr

Specifications of PESD12VS2UAT T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 2 Channels
• Breakdown Voltage: 15 V
• Clamping Voltage: 35 V
• Operating Voltage: 12 V
• Peak Surge Current: 5 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Capacitance: 75 pF
• Dimensions: 1.4 (Max) mm W x 3 (Max) mm L
• Package / Case: SOT-23
• Peak Pulse Power Dissipation: 180 W
• Factory Pack Quantity: 3000
• Part # Aliases: PESD12VS2UAT,215

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
2004 Feb 18
V
I
V
C
V
j
RM
= 25 °C; unless otherwise specified.
RWM
BR
(CL)R
Double ESD protection diodes
in SOT23 package
d
SYMBOL
reverse stand-off voltage
reverse leakage current
breakdown voltage
diode capacitance
clamping voltage
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
PARAMETER
V
V
V
V
V
I
f = 1 MHz; V
notes 1 and 2
Z
RWM
RWM
RWM
RWM
RWM
= 5 mA
I
I
I
I
I
I
I
I
I
I
pp
pp
pp
pp
pp
pp
pp
pp
pp
pp
= 1 A
= 18 A
= 1 A
= 15 A
= 1 A
= 5 A
= 1 A
= 5 A
= 1 A
= 3 A
= 3.3 V
= 5 V
= 12 V
= 15 V
= 24 V
CONDITIONS
5
R
= 0 V
−
−
−
−
−
−
−
−
−
−
5.2
6.4
14.7
17.6
26.5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MIN.
PESDxS2UAT series
−
−
−
−
−
0.7
0.1
<1
<1
<1
5.6
6.8
15.0
18.0
27.0
207
152
38
32
23
−
−
−
−
−
−
−
−
−
−
TYP.
Product data sheet
3.3
5
12
15
24
2
1
50
50
50
6.0
7.2
15.3
18.4
27.5
300
200
75
70
50
7
20
9
20
19
35
23
40
36
70
MAX.
V
V
V
V
V
µA
µA
nA
nA
nA
V
V
V
V
V
pF
pF
pF
pF
pF
V
V
V
V
V
V
V
V
V
V
UNIT