PESD12VS2UAT T/R NXP Semiconductors, PESD12VS2UAT T/R Datasheet - Page 6

• Manufacturer Part Number: PESD12VS2UAT T/R
• Description: TVS Diode Arrays 12V DUAL ESD PROTECT
• Manufacturer: NXP Semiconductors
• Series: PESDxS2UATr

Specifications of PESD12VS2UAT T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 2 Channels
• Breakdown Voltage: 15 V
• Clamping Voltage: 35 V
• Operating Voltage: 12 V
• Peak Surge Current: 5 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Capacitance: 75 pF
• Dimensions: 1.4 (Max) mm W x 3 (Max) mm L
• Package / Case: SOT-23
• Peak Pulse Power Dissipation: 180 W
• Factory Pack Quantity: 3000
• Part # Aliases: PESD12VS2UAT,215

NXP Semiconductors
Notes
1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2.
2. Measured either across pins 1 and 3 or pins 2 and 3.
GRAPHICAL DATA
2004 Feb 18
R
Double ESD protection diodes
in SOT23 package
diff
(1) PESD3V3S2UAT and PESD5V0S2UAT.
(2) PESD12VS2UAT, PESD15VS2UAT, PESD24VS2UAT
T
t
Fig.4
SYMBOL
p
P
(W)
amb
= 8/20 µs exponential decay waveform; see Fig.2.
pp
10
10
10
10
= 25 °C.
4
3
2
1
Peak pulse power dissipation as a function
of pulse time; typical values.
differential resistance
10
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
PARAMETER
10
2
(1)
(2)
10
3
001aaa147
t
p
(µs)
10
4
I
I
I
I
I
R
R
R
R
R
= 1 mA
= 1 mA
= 1 mA
= 1 mA
= 0.5 mA
CONDITIONS
6
Fig.5
P
PP(25°C)
P
PP
1.2
0.8
0.4
Relative variation of peak pulse power as a
function of junction temperature; typical
values.
0
0
−
−
−
−
−
MIN.
50
PESDxS2UAT series
−
−
−
−
−
TYP.
100
Product data sheet
400
80
200
225
300
MAX.
150
001aaa193
T
j
(°C)
Ω
Ω
Ω
Ω
Ω
UNIT
200