PESD12VS2UAT T/R NXP Semiconductors, PESD12VS2UAT T/R Datasheet - Page 8

• Manufacturer Part Number: PESD12VS2UAT T/R
• Description: TVS Diode Arrays 12V DUAL ESD PROTECT
• Manufacturer: NXP Semiconductors
• Series: PESDxS2UATr

Specifications of PESD12VS2UAT T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 2 Channels
• Breakdown Voltage: 15 V
• Clamping Voltage: 35 V
• Operating Voltage: 12 V
• Peak Surge Current: 5 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Capacitance: 75 pF
• Dimensions: 1.4 (Max) mm W x 3 (Max) mm L
• Package / Case: SOT-23
• Peak Pulse Power Dissipation: 180 W
• Factory Pack Quantity: 3000
• Part # Aliases: PESD12VS2UAT,215

NXP Semiconductors
2004 Feb 18
Double ESD protection diodes
in SOT23 package
I
PESD12V52UAT; V
PESD15VS2UAT; V
PESD24VS2UAT; V
Fig.8
(1) PESD3V3S2UAT; V
R
is less than 10 nA at 150 °C for:
I
R(25˚C)
PESD5V0S2UAT; V
I
R
10
10
−1
1
−100
Relative variation of reverse leakage
current as a function of junction
temperature; typical values.
RWM
RWM
RWM
−50
= 12 V.
RWM
RWM
= 15 V.
= 24 V.
= 3.3 V.
= 5 V.
0
(1)
50
100
001aaa270
T
j
(°C)
150
8
PESDxS2UAT series
Product data sheet