PESD12VS2UAT T/R NXP Semiconductors, PESD12VS2UAT T/R Datasheet - Page 4

• Manufacturer Part Number: PESD12VS2UAT T/R
• Description: TVS Diode Arrays 12V DUAL ESD PROTECT
• Manufacturer: NXP Semiconductors
• Series: PESDxS2UATr

Specifications of PESD12VS2UAT T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 2 Channels
• Breakdown Voltage: 15 V
• Clamping Voltage: 35 V
• Operating Voltage: 12 V
• Peak Surge Current: 5 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Capacitance: 75 pF
• Dimensions: 1.4 (Max) mm W x 3 (Max) mm L
• Package / Case: SOT-23
• Peak Pulse Power Dissipation: 180 W
• Factory Pack Quantity: 3000
• Part # Aliases: PESD12VS2UAT,215

NXP Semiconductors
ESD maximum ratings
Notes
1. Device stressed with ten non-repetitive ESD pulses; see Fig.3.
2. Measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7.
ESD standards compliance
2004 Feb 18
ESD
IEC 61000-4-2; level 4 (ESD); see Fig.3
HBM MIL-Std 883; class 3
Double ESD protection diodes
in SOT23 package
handbook, halfpage
Fig.2
SYMBOL
(%)
I pp
120
80
40
0
8/20 µs pulse waveform according to
IEC 61000-4-5.
0
ESD STANDARD
electrostatic discharge
10
100 % I pp ; 8 µs
PARAMETER
e
−t
20
50 % I pp ; 20 µs
30
t (µs)
MLE218
40
IEC 61000-4-2 (contact discharge);
notes 1 and 2
HBM MIL-Std 883
> 15 kV (air); > 8 kV (contact)
> 4 kV
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
PESDxS2UAT-series
4
Fig.3
CONDITIONS
100 %
10 %
90 %
I
pp
ElectroStatic Discharge (ESD) pulse
waveform according to IEC 61000-4-2.
CONDITIONS
t
r
30 ns
= 0.7 to 1 ns
PESDxS2UAT series
60 ns
Product data sheet
VALUE
30
30
30
30
23
10
001aaa191
t
UNIT
kV
kV
kV
kV
kV
kV