PESD12VS2UAT T/R NXP Semiconductors, PESD12VS2UAT T/R Datasheet - Page 3

• Manufacturer Part Number: PESD12VS2UAT T/R
• Description: TVS Diode Arrays 12V DUAL ESD PROTECT
• Manufacturer: NXP Semiconductors
• Series: PESDxS2UATr

Specifications of PESD12VS2UAT T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 2 Channels
• Breakdown Voltage: 15 V
• Clamping Voltage: 35 V
• Operating Voltage: 12 V
• Peak Surge Current: 5 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Capacitance: 75 pF
• Dimensions: 1.4 (Max) mm W x 3 (Max) mm L
• Package / Case: SOT-23
• Peak Pulse Power Dissipation: 180 W
• Factory Pack Quantity: 3000
• Part # Aliases: PESD12VS2UAT,215

NXP Semiconductors
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Non-repetitive current pulse 8/20µ µs exponential decay waveform; see Fig.2.
2. Measured across either pins 1 and 3 or pins 2 and 3.
2004 Feb 18
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
P
I
T
T
T
pp
j
amb
stg
pp
Double ESD protection diodes
in SOT23 package
SYMBOL
TYPE NUMBER
peak pulse power
peak pulse current
junction temperature
operating ambient temperature
storage temperature
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
PESD3V3S2UAT
PESD5V0S2UAT
PESD12VS2UAT
PESD15VS2UAT
PESD24VS2UAT
PARAMETER
NAME
−
plastic surface mounted package; 3 leads
8/20 µs pulse; notes 1 and 2
8/20 µs pulse; notes 1 and 2
3
DESCRIPTION
CONDITIONS
PACKAGE
PESDxS2UAT series
−
−
−
−
−
−
−
−
−
−
−
−65
−65
MIN.
Product data sheet
330
260
180
160
160
18
15
5
5
3
150
+150
+150
MAX.
VERSION
SOT23
W
W
W
W
W
A
A
A
A
A
°C
°C
°C
UNIT