PESD12VS2UAT T/R NXP Semiconductors, PESD12VS2UAT T/R Datasheet - Page 7

• Manufacturer Part Number: PESD12VS2UAT T/R
• Description: TVS Diode Arrays 12V DUAL ESD PROTECT
• Manufacturer: NXP Semiconductors
• Series: PESDxS2UATr

Specifications of PESD12VS2UAT T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 2 Channels
• Breakdown Voltage: 15 V
• Clamping Voltage: 35 V
• Operating Voltage: 12 V
• Peak Surge Current: 5 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Capacitance: 75 pF
• Dimensions: 1.4 (Max) mm W x 3 (Max) mm L
• Package / Case: SOT-23
• Peak Pulse Power Dissipation: 180 W
• Factory Pack Quantity: 3000
• Part # Aliases: PESD12VS2UAT,215

NXP Semiconductors
2004 Feb 18
Double ESD protection diodes
in SOT23 package
Fig.6
(1) PESD3V3S2UAT; V
(2) PESD5V0S2UAT; V
T
(pF)
C
amb
240
200
160
120
d
80
40
= 25 °C; f = 1 MHz.
0
Diode capacitance as a function of reverse
voltage; typical values.
1
(1)
(2)
RWM
RWM
2
= 3.3 V.
= 5 V.
3
4
001aaa148
V
R
(V)
5
7
(1) PESD12VS2UAT; V
(2) PESD15VS2UAT; V
(3) PESD24VS2UAT; V
Fig.7
T
amb
(pF)
= 25 °C; f = 1 MHz.
C
d
50
40
30
20
10
0
Diode capacitance as a function of reverse
voltage; typical values.
0
5
(1)
(2)
(3)
RWM
RWM
RWM
PESDxS2UAT series
= 12 V.
= 15 V.
= 24 V.
10
15
Product data sheet
20
001aaa149
V
R
(V)
25