PESD12VS2UAT T/R NXP Semiconductors, PESD12VS2UAT T/R Datasheet - Page 13

• Manufacturer Part Number: PESD12VS2UAT T/R
• Description: TVS Diode Arrays 12V DUAL ESD PROTECT
• Manufacturer: NXP Semiconductors
• Series: PESDxS2UATr

Specifications of PESD12VS2UAT T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 2 Channels
• Breakdown Voltage: 15 V
• Clamping Voltage: 35 V
• Operating Voltage: 12 V
• Peak Surge Current: 5 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Capacitance: 75 pF
• Dimensions: 1.4 (Max) mm W x 3 (Max) mm L
• Package / Case: SOT-23
• Peak Pulse Power Dissipation: 180 W
• Factory Pack Quantity: 3000
• Part # Aliases: PESD12VS2UAT,215

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NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [e-mail]
R76/01/pp 13
Date of release: 2004 Feb 18
Document order number:
9397 750 12247