SI7703EDN-T1 Vishay/Siliconix, SI7703EDN-T1 Datasheet - Page 6

• Manufacturer Part Number: SI7703EDN-T1
• Description: MOSFET 20V 6.3A 2.8W
• Manufacturer: Vishay/Siliconix

Specifications of SI7703EDN-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.3 A
• Resistance Drain-source Rds (on): 48 mOms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK 1212-8
• Fall Time: 6 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.3 W
• Rise Time: 6 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 23 ns

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Si7703EDN
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS (T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71429.
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
Duty Cycle = 0.5
0.2
0.1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.02
Single Pulse
0.05
10
-3
For technical questions, contact:
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
150
120
-3
90
60
30
0
10
0
This document is subject to change without notice.
-2
4
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
V
KA
10
- Reverse Voltage (V)
Capacitance
-1
8
A
[e-mail]
= 25 °C, unless otherwise noted)
10
-2
12
1
16
20
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
1 0
Notes:
10
P
DM
JM
-1
- T
A
t
1
= P
t
2
DM
Z
thJ A
th J A
100
S13-0297-Rev. D, 11-Feb-13
(t)
t
t
1
2
= 91 °C/W
Document Number: 71429
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