SI7703EDN-T1 Vishay/Siliconix, SI7703EDN-T1 Datasheet

SI7703EDN-T1

Manufacturer Part Number

SI7703EDN-T1

Description

MOSFET 20V 6.3A 2.8W

Manufacturer

Vishay/Siliconix

Datasheet

1.SI7703EDN-T1.pdf (13 pages)

Specifications of SI7703EDN-T1

Product Category

MOSFET

Transistor Polarity

P-Channel

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

+/- 12 V

Continuous Drain Current

4.3 A

Resistance Drain-source Rds (on)

48 mOms

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

PowerPAK 1212-8

Fall Time

6 ns

Minimum Operating Temperature

- 55 C

Power Dissipation

1.3 W

Rise Time

6 ns

Factory Pack Quantity

3000

Tradename

TrenchFET

Typical Turn-off Delay Time

23 ns

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI7703EDN-T1-E3

Manufacturer:

SANYO

Quantity:

1 446

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI7703EDN-T1-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI7703EDN-T1-GE3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Current page: 1 of 13
Download datasheet (573Kb)

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. See solder profile (

c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 71429

S13-0297-Rev. D, 11-Feb-13

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

PRODUCT SUMMARY

SCHOTTKY PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS (T

Parameter

Drain-Source Voltage (MOSFET and Schottky)

Reverse Voltage (Schottky)

Gate-Source Voltage (MOSFET)

Continuous Drain Current (T

Pulsed Drain Current (MOSFET)

Continuous Source Current (MOSFET Diode Conduction)

Average Foward Current (Schottky)

Pulsed Foward Current (Schottky)

Maximum Power Dissipation (MOSFET)

Maximum Power Dissipation (Schottky)

Operating Junction and Storage Temperature Range

Soldering Recommendations

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

Ordering Information:

Si7703EDN-T1-GE3 (Lead (Pb)-free and Halogen-free)

- 20

(V)

Single P-Channel 20 V (D-S) MOSFET With Schottky Diode

3.30 mm

Diode Forward Voltage

0.048 at V

0.068 at V

0.090 at V

www.vishay.com/doc?73257

PowerPAK 1212-8

0.48 V at 0.5 A

Bottom View

DS(on)

b,c

(V)

= 150 °C) (MOSFET)

= - 4.5 V

= - 2.5 V

= - 1.8 V

()

For technical questions, contact:

). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper

3.30 mm

This document is subject to change without notice.

- 6.3

- 5.3

- 4.6

= 25 °C, unless otherwise noted)

(A)

= 25 °C

= 85 °C

= 25 °C

= 85 °C

= 25 °C

= 85 °C

pmostechsupport@vishay.com

FEATURES

APPLICATIONS

Symbol

• TrenchFET

• ESD Protected: 4500 V

• Ultra-Low Thermal Resistance, PowerPAK

• Material categorization:

• Charger Switching

, T

Package with Low 1.07 mm Profile

For definitions of compliance please see

www.vishay.com/doc?99912

stg

Power MOSFETS: 1.8 V Rated

- 6.3

- 4.5

- 2.3

10 s

± 12

3 kΩ

2.8

1.5

- 55 to 150

P-Channel MOSFET

- 20

260

Steady State

± 12

- 4.3

- 3.1

- 1.1

1.3

0.7

1.1

0.6

Vishay Siliconix

www.vishay.com/doc?91000

Si7703EDN

www.vishay.com

Unit

°C

Related parts for SI7703EDN-T1

Related keywords

SI7703EDN-T1 datasheet
SI7703EDN-T1 data sheet
SI7703EDN-T1 pdf datasheet
SI7703EDN-T1 component
SI7703EDN-T1 part
SI7703EDN-T1 distributor
SI7703EDN-T1 RoHS
SI7703EDN-T1 datasheet download