SI7703EDN-T1 Vishay/Siliconix, SI7703EDN-T1 Datasheet - Page 5

• Manufacturer Part Number: SI7703EDN-T1
• Description: MOSFET 20V 6.3A 2.8W
• Manufacturer: Vishay/Siliconix

Specifications of SI7703EDN-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.3 A
• Resistance Drain-source Rds (on): 48 mOms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK 1212-8
• Fall Time: 6 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.3 W
• Rise Time: 6 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 23 ns

Document Number: 71429
S13-0297-Rev. D, 11-Feb-13
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
MOSFET TYPICAL CHARACTERISTICS (T
SCHOTTKY TYPICAL CHARACTERISTICS (T
0.0001
0.001
0.01
0.1
20
10
1
0.01
0.01
0
Reverse Current vs. Junction Temperature
0.1
0.1
2
1
2
1
10
10
-4
-4
2 5
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
Single Pulse
T
J
0.02
20 V
- Junction Temperature (°C)
5 0
0.05
0.1
10
-3
Single Pulse
7 5
For technical questions, contact:
10 V
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
1 0 0
10
-3
10
125
-2
This document is subject to change without notice.
150
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
A
10
= 25 °C, unless otherwise noted)
-1
A
[e-mail]
10
= 25 °C, unless otherwise noted)
-2
1
0.1
5
1
0
0.2
T
J
= 150 °C
1 0
V
10
Forward Voltage Drop
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
F
P
-1
DM
- Forward Voltage Drop (V)
JM
- T
0.4
t
A
1
= P
t
2
DM
Z
thJA
0.6
100
th J A
T
t
t
1
2
J
(t )
Vishay Siliconix
= 25 °C
= 75 °C/W
www.vishay.com/doc?91000
Si7703EDN
0.8
600
www.vishay.com
1
1.0
5