SI7703EDN-T1 Vishay/Siliconix, SI7703EDN-T1 Datasheet - Page 3

• Manufacturer Part Number: SI7703EDN-T1
• Description: MOSFET 20V 6.3A 2.8W
• Manufacturer: Vishay/Siliconix

Specifications of SI7703EDN-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.3 A
• Resistance Drain-source Rds (on): 48 mOms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK 1212-8
• Fall Time: 6 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.3 W
• Rise Time: 6 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 23 ns

Document Number: 71429
S13-0297-Rev. D, 11-Feb-13
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
MOSFET TYPICAL CHARACTERISTICS (T
0.15
0.12
0.09
0.06
0.03
0.00
20
16
12
8
6
4
2
0
8
4
0
0.0
0
0
Gate-Current vs. Gate-Source Voltage
V
0.5
GS
On-Resistance vs. Drain Current
= 1.8 V
4
V
V
Output Characteristics
1.0
DS
GS
4
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
I
D
1.5
- Drain Current (A)
8
V
2.0
GS
8
For technical questions, contact:
= 5 thru 2.5 V
V
GS
12
2.5
= 2.5 V
V
3.0
12
GS
16
This document is subject to change without notice.
= 4.5 V
1.5 V
3.5
2 V
4.0
16
20
A
= 25 °C, unless otherwise noted)
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10000
0.001
1000
2000
1600
1200
0.01
100
0.1
800
400
10
20
16
12
1
8
4
0
0
0.0
0
0
C
rss
Gate Current vs. Gate-Source Voltage
T
J
0.5
= 150 °C
V
4
3
V
DS
V
Transfer Characteristics
GS
GS
- Drain-to-Source Voltage (V)
T
- Gate-to-Source Voltage (V)
J
1.0
- Gate-to-Source Voltage (V)
= 25 °C
Capacitance
C
6
8
os s
C
1.5
T
is s
C
25 °C
= - 55 °C
1 2
9
Vishay Siliconix
2.0
www.vishay.com/doc?91000
Si7703EDN
12
1 6
2.5
125 °C
www.vishay.com
3.0
1 5
2 0
3