SI7703EDN-T1 Vishay/Siliconix, SI7703EDN-T1 Datasheet - Page 12

• Manufacturer Part Number: SI7703EDN-T1
• Description: MOSFET 20V 6.3A 2.8W
• Manufacturer: Vishay/Siliconix

Specifications of SI7703EDN-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.3 A
• Resistance Drain-source Rds (on): 48 mOms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK 1212-8
• Fall Time: 6 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.3 W
• Rise Time: 6 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 23 ns

Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK
www.vishay.com
1
Return to Index
Return to Index
(0.660)
(0.405)
0.026
(0.660)
0.016
0.026
(0.405)
0.016
(0.990)
(0.635)
0.039
0.025
(0.990)
0.039
Recommended Minimum PADs for PowerPAK 1212-8 Dual
(0.635)
0.025
Recommended Minimum Pads
Dimensions in Inches/(mm)
Dimensions in Inches/(mm)
(3.860)
®
0.152
(0.990)
(0.990)
1212-8 Dual
0.039
0.039
(3.860)
0.152
(1.725)
0.068
(1.725)
0.068
(0.760)
0.030
(0.760)
0.030
(0.225)
0.010
(2.390)
0.094
(0.255)
0.010
Document Number: 72598
Revision: 14-Apr-08