SI7703EDN-T1 Vishay/Siliconix, SI7703EDN-T1 Datasheet - Page 2

• Manufacturer Part Number: SI7703EDN-T1
• Description: MOSFET 20V 6.3A 2.8W
• Manufacturer: Vishay/Siliconix

Specifications of SI7703EDN-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.3 A
• Resistance Drain-source Rds (on): 48 mOms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK 1212-8
• Fall Time: 6 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.3 W
• Rise Time: 6 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 23 ns

www.vishay.com
2
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Si7703EDN
Vishay Siliconix
Notes
a. Surface Mounted on 1" x 1" FR4 board.
Notes
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
MOSFET SPECIFICATIONS (T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
SCHOTTKY SPECIFICATIONS (T
Parameter
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
b
a
a
a
a
For technical questions, contact:
Steady State
Steady State
a
t 10 s
Symbol
Symbol
R
V
I
t
t
I
I
GS(th)
D(on)
DS(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
Q
V
I
C
g
rm
SD
t
t
gd
fs
gs
r
f
F
T
g
J
= 25 °C, unless otherwise noted)
This document is subject to change without notice.
J
= 25 °C, unless otherwise noted)
V
MOSFET
MOSFET
MOSFET
Schottky
Schottky
Schottky
DS
I
Device
V
D
DS
 - 1 A, V
= - 10 V, V
= - 20 V, V
V
V
V
V
V
V
V
V
V
V
I
DS
V
GS
GS
I
DS
DS
F
DS
DS
S
V
DS
DD
GS
r
= 0.5 A, T
r
= - 2.3 A, V
Test Conditions
Test Conditions
= 20 V, T
 - 5 V, V
= V
= - 4.5 V, I
= - 2.5 V, I
= 0 V, V
= 20 V, T
= - 10 V, I
= 0 V, V
= - 20 V, V
= - 1.8 V, I
= - 10 V, R
GEN
I
V
V
GS
GS
F
[e-mail]
r
r
GS
= 0.5 A
, I
= 20 V
= 10 V
= - 4.5 V, I
= - 4.5 V, R
Symbol
D
GS
GS
J
R
R
= 0 V, T
J
GS
J
D
= - 800 µA
D
D
= 125 °C
thJA
thJC
= 125 °C
GS
= 85 °C
= ± 4.5 V
GS
D
L
= ± 12 V
= - 6.3 A
= - 6.3 A
= - 5.3 A
= - 4.5 V
= - 1 A
= 10 
= 0 V
= 0 V
J
D
= 85 °C
G
= - 6.3 A
= 6 
Typical
91
35
51
75
10
4
- 0.45
Min.
Min.
- 20
Maximum
0.002
0.041
0.057
0.072
Typ.
Typ.
- 0.8
0.42
0.33
0.10
1.5
2.5
2.9
2.5
31
14
12
15
12
4
115
44
64
94
12
S13-0297-Rev. D, 11-Feb-13
5
Document Number: 71429
www.vishay.com/doc?91000
0.100
± 100
0.048
0.068
0.090
± 1.5
Max.
Max.
0.48
- 1.2
0.4
- 1
- 1
- 5
10
18
23
18
1
4
6
°C/W
Unit
Unit
Unit
mA
mA
nC
pF
µA
µA
s

V
V
A
S
V