SI9433DY Vishay Siliconix, SI9433DY Datasheet
SI9433DY
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SI9433DY Summary of contents
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... P-Channel MOSFET Symbol stg Symbol R thJA www.vishay.com FaxBack 408-970-5600 Si9433DY Vishay Siliconix Limit Unit – 5.4 4 –2.6 2 1.6 –55 to 150 C Limit Unit 50 C/W 1 ...
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... Si9433DY Vishay Siliconix Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b b On-State Drain Current On-State Drain Current b b Drain-Source On-State Resistance Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic ...
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... 4000 3000 2000 = 4.5 V 1000 On-Resistance vs. Junction Temperature 2.0 V 1.6 I 1.2 0.8 0 –50 –25 Si9433DY Vishay Siliconix Transfer Characteristics T = 125 –55 C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage ( ...
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... Si9433DY Vishay Siliconix Source-Drain Diode Forward Voltage T = 150 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.8 0 250 A D 0.4 0.2 0.0 –0.2 –0.4 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 – ...