SI7703EDN-T1 Vishay/Siliconix, SI7703EDN-T1 Datasheet - Page 4

• Manufacturer Part Number: SI7703EDN-T1
• Description: MOSFET 20V 6.3A 2.8W
• Manufacturer: Vishay/Siliconix

Specifications of SI7703EDN-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.3 A
• Resistance Drain-source Rds (on): 48 mOms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK 1212-8
• Fall Time: 6 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.3 W
• Rise Time: 6 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 23 ns

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Si7703EDN
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS (T
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
20
10
1
5
4
3
2
1
0
- 50
0
0
Source-Drain Diode Forward Voltage
- 25
V
I
D
T
DS
2
J
0.3
= 6.3 A
= 150 °C
V
= 10 V
SD
0
Q
- Source-to-Drain Voltage (V)
4
g
Threshold Voltage
I
- Total Gate Charge (nC)
D
T
0.6
J
= 800 µA
2 5
Gate Charge
- T emperature (°C)
6
5 0
0.9
For technical questions, contact:
8
T
7 5
J
= 25 °C
1.2
10
100
1.5
This document is subject to change without notice.
12
125
1.8
150
14
A
= 25 °C, unless otherwise noted)
[e-mail]
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
1.5
1.3
1.1
0.9
0.7
50
40
30
20
10
0.001
0
- 50
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
Single Pulse Power, Junction-to-Ambient
- 25
V
I
D
0.01
GS
= 6.3 A
= 4.5 V
1
V
T
0
GS
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
0.1
2 5
2
Time (s)
5 0
1
I
D
3
= 6.3 A
S13-0297-Rev. D, 11-Feb-13
7 5
Document Number: 71429
www.vishay.com/doc?91000
10
100
4
125
100
150
600
5