NDS9400A_D87Z Fairchild Semiconductor, NDS9400A_D87Z Datasheet - Page 5

• Manufacturer Part Number: NDS9400A_D87Z
• Description: MOSFET Single P-Ch FET Enhancement Mode
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9400A_D87Z

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.4 A
• Resistance Drain-source Rds (on): 0.13 Ohms
• Configuration: Single Quad Drain Triple Source
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 8 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.5 W
• Rise Time: 21 ns
• Typical Turn-off Delay Time: 21 ns

Typical Electrical Characteristics
Figure 11. Transconductance Variation with Drain
1 0 0 0
8 0 0
5 0 0
3 0 0
2 0 0
1 0 0
1.08
1.06
1.04
1.02
0.98
0.96
0.94
6
5
4
3
2
1
0
5 0
1.1
Figure 9. Capacitance Characteristics.
Figure 7. Breakdown Voltage Variation with
0
1
0.1
-50
Current and Temperature.
V
DS
= -15V
I
Temperature.
D
0.2
-25
f = 1 MHz
V
= -250µA
GS
-2
= 0V
-V
DS
T
0
J
0.5
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
I
D
25
, DRAIN CURRENT (A)
-4
1
50
T
2
J
= -55°C
-6
75
25°C
5
(continued)
100
125°C
1 0
-8
125
C iss
C oss
C rss
150
3 0
-10
0.001
10
0.01
8
6
4
2
0
0.5
0.1
Figure 10. Gate Charge Characteristics.
1 0
Figure 8. Body Diode Forward Voltage
0
5
1
0.2
I
D
V
Variation with Current and Temperature
= -3.4A
GS
T = 125°C
J
2
= 0V
0.4
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Q
4
0.6
g
, GATE CHARGE (nC)
25°C
0.8
6
V
DS
-55°C
= -10V
1
8
1.2
10
-20V
NDS9400A.SAM
-15V
.
1.4
12