NDS9400A_D87Z Fairchild Semiconductor, NDS9400A_D87Z Datasheet

NDS9400A_D87Z

Manufacturer Part Number

NDS9400A_D87Z

Description

MOSFET Single P-Ch FET Enhancement Mode

Manufacturer

Fairchild Semiconductor

Datasheet

1.NDS9400A_D87Z.pdf (7 pages)

Specifications of NDS9400A_D87Z

Transistor Polarity

P-Channel

Drain-source Breakdown Voltage

- 30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

3.4 A

Resistance Drain-source Rds (on)

0.13 Ohms

Configuration

Single Quad Drain Triple Source

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SOIC-8 Narrow

Fall Time

8 ns

Minimum Operating Temperature

- 55 C

Power Dissipation

2.5 W

Rise Time

21 ns

Typical Turn-off Delay Time

21 ns

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Absolute Maximum Ratings

________________________________________________________________________________

Symbol

THERMAL CHARACTERISTICS

DSS

GSS

NDS9400A

Single P-Channel Enhancement Mode Field Effect Transistor

General Description

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance, provide

superior switching performance, and withstand high energy

pulses in the avalanche and commutation modes. These

devices are particularly suited for low voltage applications such

as notebook computer power management and other battery

powered circuits where fast switching, low in-line power loss,

and resistance to transients are needed.

STG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

Maximum Power Dissipation

Operating and Storage Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

- Pulsed

= 25°C unless otherwise noted

(Note 1a)

(Note 1)

(Note 1a)

(Note 1b)

(Note 1c)

Features

-3.4A, -30V. R

High density cell design for extremely low R

High power and current handling capability in a widely used

surface mount package.

Rugged and reliable.

DS(ON)

NDS9400A

-55 to 150

= 0.13

± 3.4

± 20

± 10

-30

2.5

1.2

@ V

= -10V.

DS(ON)

February 1996

NDS9400A.SAM

Units

°C/W

°C

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NDS9400A_D87Z Summary of contents

Page 1

... THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient R JA Thermal Resistance, Junction-to-Case R JC © 1997 Fairchild Semiconductor Corporation Features -3.4A, -30V. R High density cell design for extremely low R High power and current handling capability in a widely used surface mount package. Rugged and reliable. ...

Page 2

Electrical Characteristics (T = 25°C unless otherwise noted) A Symbol Parameter OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate - Body Leakage, Forward GSSF I Gate - Body Leakage, Reverse GSSR ON ...

Page 3

Electrical Characteristics (T = 25°C unless otherwise noted) A Symbol Parameter DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I Maximum Continuous Drain-Source Diode Forward Current S V Drain-Source Diode Forward Voltage SD t Reverse Recovery Time rr I Reverse Recovery Current ...

Page 4

Typical Electrical Characteristics - -10V GS -8.0 -7.0 -15 - DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -3. -10V G S 1.2 ...

Page 5

Typical Electrical Characteristics 1 -250µA D 1.08 1.06 1.04 1.02 1 0.98 0.96 0.94 -50 - JUNCTION TEMPERATURE (°C) J Figure 7. Breakdown Voltage Variation with Temperature ...

Page 6

Typical Thermal Characteristics 2 0.5 0 0.2 0.4 0.6 2oz COPPER MOUNTING PAD AREA (in Figure 12. SO-8 Dual Package Maximum Steady-State Power Dissipation versus Copper Mounting Pad Area ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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