NDS9400 FAIRCHILD [Fairchild Semiconductor], NDS9400 Datasheet
NDS9400
Manufacturer Part Number
NDS9400
Description
Single P-Channel Enhancement Mode Field Effect Transistor
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.NDS9400.pdf
(10 pages)
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Price
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HARRIS
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186
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NDS9400
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FAIRCHILD/仙童
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NDS9400 TR
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NS
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Part Number:
NDS9400A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Absolute Maximum Ratings
________________________________________________________________________________
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
D
© 1997 Fairchild Semiconductor Corporation
DSS
GSS
D
J
NDS9400A
Single P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
,T
JA
JC
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
- Pulsed
T
A
= 25°C unless otherwise noted
(Note 1a)
(Note 1)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
Features
-3.4A, -30V. R
High density cell design for extremely low R
High power and current handling capability in a widely used
surface mount package.
Rugged and reliable.
5
6
7
8
DS(ON)
NDS9400A
-55 to 150
= 0.13
± 3.4
± 20
± 10
-30
2.5
1.2
50
25
1
@ V
GS
= -10V.
2
4
3
1
DS(ON)
February 1996
.
NDS9400A.SAM
Units
°C/W
°C/W
°C
W
V
V
A
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