NDS9400A_D87Z Fairchild Semiconductor, NDS9400A_D87Z Datasheet - Page 3

• Manufacturer Part Number: NDS9400A_D87Z
• Description: MOSFET Single P-Ch FET Enhancement Mode
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9400A_D87Z

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.4 A
• Resistance Drain-source Rds (on): 0.13 Ohms
• Configuration: Single Quad Drain Triple Source
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 8 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.5 W
• Rise Time: 21 ns
• Typical Turn-off Delay Time: 21 ns

Electrical Characteristics
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
t
I
Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
S
rr
rr
SD
design while R
P
Typical R
D
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
t
a. 50
b. 105
c. 125
Scale 1 : 1 on letter size paper
JA
R
1a
T
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
J
J A
Parameter
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Current
T
o
CA
A
t
C/W when mounted on a 1 in
o
o
C/W when mounted on a 0.04 in
C/W when mounted on a 0.006 in
is determined by the user's board design.
R
J C
T
J
R
T
A
CA
t
I
2
D
t
2
pad of 2oz cpper.
R
DS ON
(T
2
pad of 2oz cpper.
2
pad of 2oz cpper.
A
= 25°C unless otherwise noted)
T
J
1b
Conditions
V
V
GS
GS
= 0 V, I
= 0 V, I
F
S
= -2.0 A, dI
= -1.25 A
(Note 2)
F
/dt = 100 A/µs
1c
Min
Typ
-0.8
1.9
Max
JC
-1.9
-1.3
100
is guaranteed by
NDS9400A.SAM
Units
ns
A
V
A