IRFP150N_R4942 Fairchild Semiconductor, IRFP150N_R4942 Datasheet - Page 7

• Manufacturer Part Number: IRFP150N_R4942
• Description: MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of IRFP150N_R4942

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 44 A
• Resistance Drain-source Rds (on): 0.03 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-247
• Fall Time: 61 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 155 W
• Rise Time: 75 ns
• Factory Pack Quantity: 150
• Typical Turn-off Delay Time: 37 ns

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TSSOP-8 P-Channel
FDW256P
FDW2506P
FDW2502P
FDW2502PZ
FDW2504P
FDW254P
FDW254PZ
FDW252P
FDW262P
FDW2508P
FDW258P
SuperSOT-8 N-Channel
FDR8305N
FDR6580
FDR6674A
FDR4420A
FDR6678A
SuperSOT-8 Complementary N- and P-Channel
FDR8702H
SuperSOT-8 P-Channel
FDR8508P
FDR856P
FDR858P
FDR8308P
NDH8302P
NDH8304P
FDR844P
FDR840P
FDR836P
FDR838P
NDH834P
NDH832P
FDR842P
SO-8 FLMP N-Channel
FDS6064N7
FDS7062N7
FDS6162N7
FDS6064N3
FDS6162N3
FDS7064N7
FDS7064N
FDS7088N7
FDS7088N3
FDS7066N7
FDS7060N7
FDS7066N3
FDS7082N3
FDS7096N3
FDS7066SN3
FDS7064SN3
FDS4070N7
FDS4070N3
FDS4072N7
FDS4080N7
Products
Min (V)
BV DSS
-30
-20
-20
-20
-20
-20
-20
-20
-20
-12
-12
-20
-30
-30
-30
-20
-20
-20
-20
-20
-20
-20
-20
-20
-12
20
20
30
30
30
20
20
20
20
20
20
30
30
30
30
30
30
30
30
30
30
30
40
40
40
40
Complementary
Configuration
SyncFET
SyncFET
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Use FDR858P
Use NDH8304P
Use FDR838P
Use FDR838P
Use FDS6064N7
0.0135
0.0085
0.0045
0.0055
0.0055
0.0075
0.009
0.019
0.003
0.004
0.005
0.006
0.009
0.008
0.007
0.009
0.02
0.05
0.01
10V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
R DS(ON) Max. (Ohms) @ V GS =
0.0125
0.0095
0.0055
0.0055
0.0065
0.0035
0.0035
0.0045
0.0075
0.0095
0.022
0.035
0.035
0.043
0.012
0.012
0.047
0.018
0.011
0.022
0.009
0.013
0.024
0.038
0.075
0.028
0.011
0.011
0.017
0.009
0.004
0.007
0.004
0.007
0.008
0.012
0.006
0.011
4.5V
0.02
0.08
0.05
0.07
0.06
-
-
-
0.08@2.7V
0.095@2.7V
0.033
0.057
0.057
0.015
0.015
0.018
0.065
0.022
0.014
0.028
0.054
0.014
0.016
0.024
0.012
0.004
0.005
0.005
0.006
0.011
2.5V
0.07
0.11
0.07
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.0215
0.0215
0.016
0.006
0.007
0.03
0.02
0.02
1.8V
0.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
@ V GS = 5V
Q g (nC) Typ
(Note pg. i)
16.2
9.7
28
21
14
14
60
60
41
13
26
61
34
33
23
13
21
13
16
53
41
30
18
57
70
52
70
52
30
30
37
34
43
35
43
38
16
41
25
47
47
33
30
7
6
8
5
Maximum Rating
I D (A)
16.5
17.5
15.3
15.3
12.4
11.2
11.5
-2.6
5.3
4.4
4.4
3.8
9.2
9.2
8.8
4.5
4.5
7.5
3.6
3.2
2.7
4.2
10
10
23
23
23
21
16
23
21
23
19
23
14
19
16
13
11
11
8
6
9
3
8
8
P D (W)
3.13
1.3
1.3
1.4
1.3
1.3
1.3
1.3
0.8
1.8
1.8
1.8
1.8
0.8
0.8
1.8
0.8
0.8
1.8
1.8
1.8
1.8
1.8
3.9
1
1
1
1
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3