IRFP150N_R4942 Fairchild Semiconductor, IRFP150N_R4942 Datasheet - Page 40

• Manufacturer Part Number: IRFP150N_R4942
• Description: MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of IRFP150N_R4942

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 44 A
• Resistance Drain-source Rds (on): 0.03 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-247
• Fall Time: 61 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 155 W
• Rise Time: 75 ns
• Factory Pack Quantity: 150
• Typical Turn-off Delay Time: 37 ns

Application Specific
Load Switches
SC70-6 P-Channel
FDG6331L
FDG6323L
FDG6324L
SuperSOT-6/TSOP-6 P-Channel
FDC6331L
FDC6329L
FDC6325L
FDC6323L
FDC6332L
FDC6330L
FDC6326L
FDC6324L
SuperSOT-8 P-Channel
FDR8521L
SuperSOT-6/TSOP-6 P-Channel
FDC6392S
TSSOP-8 P-Channel
FDW6923
SO-8 N-Channel
FDFS6N303
SO-8 P-Channel
FDFS2P106A
FDFS2P103
FDFS2P102
FDFS2P102A
FDFS2P103A
SC70-5
FDG901D
SuperSOT-6/TSOP-6
FDC6901L
MOSFET & Schottky Diode Combo
Products
Products
Products
P-Channel Slew
Rate Control Driver
Integrated Driver
& Load Switch
Function
38
P-Channel
P-Channel Single Integrated
Polarity
V IN Max
V DS (V)
(V)
-20
-20
-60
-30
-20
-20
20
20
20
20
20
30
30
8
8
8
8
8
8
8
Special Function Products
Configuration
V GS Max
I D (A)
Single
20
20
20
20
(V)
8
8
8
8
8
8
8
-
2.2
3.5
5.3
3.3
3.3
5.3
6
3
12V
10V
0.035
0.059
0.125
0.125
0.059
I L (A) @ V DROP = 0.2V
V
0.11
0.36
2.5
1.5
1
2.9
-
-
-
-
-
-
-
R DS(ON) Max (Ohm)
DD
-
-
2.7
2.7
Voltage Range
(min) V
Operating
V GS =
4.5V
0.045
0.092
0.092
0.36
0.27
2.8
2.8
1.5
1
1.6
1
0.67
1.8
0.15
0.05
0.14
5V
-
-
0.2
0.2
DD
6
6
(max) I
2.5V
2.5V
0.075
0.7
0.27
2.5
1.9
1
0.67
-
-
-
-
-
-
0.2
-
-
-
-
-
-
LOAD
0.00012
12V
(nC)
0.55
0.08
0.125
0.2
0.07
(typ) (A) t
-
-
-
-
-
-
-
3
3.7
9.7
5.3
3.5
2.1
5.3
12
15
Q G
V GS (V)
4.5V
0.26
0.55
0.75
0.055
0.07
0.13
0.2
0.35
0.125
0.2
0.3
0.115
4.5
4.5
4.5
4.5
10
rise
5
5
-
R ON Max (Ohm)
(typ) (us) t
124
28
@ V IN =
3.3V
Schottky Diode
V F (V)
0.3
0.45
0.42
0.58
0.57
0.58
0.58
0.35
-
-
-
-
-
-
-
-
-
-
-
0.5
www.fairchildsemi.com
fall
(typ) (us) P
2.5V
I F (A)
0.33
0.75
0.07
0.105
0.18
0.5
-
-
-
-
-
-
-
-
0.25
1
2
3
2
1
2
2
P D (W)
1.8V
0.45
0.1
0.75
0.15
-
-
-
-
-
-
-
-
-
D
1.6
0.96
1.2
(W)
2
2
2
2
2
2