IRFP150N_R4942 Fairchild Semiconductor, IRFP150N_R4942 Datasheet - Page 5

• Manufacturer Part Number: IRFP150N_R4942
• Description: MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of IRFP150N_R4942

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 44 A
• Resistance Drain-source Rds (on): 0.03 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-247
• Fall Time: 61 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 155 W
• Rise Time: 75 ns
• Factory Pack Quantity: 150
• Typical Turn-off Delay Time: 37 ns

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SuperSOT-3/SOT-23 P-Channel (cont.)
NDS356P
NDS352AP
NDS352P
FDV304P
FDV302P
FDN304P
FDN304PZ
FDN302P
FDN340P
FDN342P
FDN338P
FDN308P
FDN336P
NDS332P
FDN306P
FDM3300NZ
MicroFET P-Channel
FDM606P
SuperSOT-6/TSOP-6 FLMP N-Channel
FDC796N
FDC3616N
SuperSOT-6/TSOP-6 FLMP P-Channel
FDC6036P
FDC697P
FDC699P
SuperSOT-6/TSOP-6 N-Channel
MicroFET N-Channel
FDC6401N
FDC6305N
FDC637AN
NDH831N
FDC6303N
FDC6301N
FDC6561AN
FDC645N
FDC655AN
FDC633N
FDC653N
NDC651N
NDC7002N
FDC5612
FDC3512
FDC3601N
FDC3612
FDC2512
FDC2612
SuperSOT-6/TSOP-6 Complementary N- and P-Channel
FDC6420C
FDC6327C
FDC6320C
Products
Min (V)
BV DSS
100
100
100
150
200
-30
-30
-30
-25
-25
-20
-20
-20
-20
-20
-20
-20
-20
-20
-12
-20
-20
-20
-20
-20
-20
-25
20
30
20
20
20
20
25
25
30
30
30
30
30
30
50
60
80
20
20
25
(Common Drain)
Complementary
Complementary
Complementary
Configuration
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Use NDS356AP
Use NDS352AP
Use FDC637AN
0.009
0.095
0.026
0.027
0.035
0.055
0.077
0.125
0.425
0.725
0.07
0.06
10V
0.3
0.5
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
R DS(ON) Max. (Ohms) @ V GS =
0.052
0.052
0.055
0.115
0.125
0.023
0.026
0.012
0.044
0.022
0.024
0.145
0.035
0.042
0.055
0.125
4.5V
0.07
0.08
0.04
0.02
0.07
0.08
0.45
0.03
0.09
0.07
0.08
0.17
0.5
1.1
0.2
0.3
10
4
-
-
-
-
-
-
-
-
-
0.41@2.7V
1.5@2.7V
0.6@2.7V
13@2.7V
13@2.7V
5@2.7V
5@2.7V
0.155
0.028
0.033
0.064
0.025
0.095
0.032
0.054
0.095
2.5V
0.07
0.07
0.08
0.11
0.13
0.19
0.27
0.05
0.03
0.12
0.19
0.12
0.25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.052
0.095
0.035
0.08
1.8V
0.1
0.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
@ V GS = 5V
Q g (nC) Typ
(Note pg. i)
0.22
10.5
1.64
0.49
12.5
3.25
2.85
0.29
0.23
1.1
6.3
4.4
3.8
3.6
3.7
3.3
3.5
2.1
3.7
3.3
3.7
12
12
12
12
20
14
23
10
39
27
13
11
12
10
13
14
2
9
8
9
1
8
8
3
Maximum Rating
I D (A)
0.46
0.12
12.5
0.68
0.22
0.51
0.22
0.12
0.9
2.4
2.4
2.4
1.6
1.5
1.2
2.6
6.8
3.7
2.7
6.2
2.5
5.5
6.3
5.2
3.2
4.3
2.6
1.4
1.1
2.2
2.7
1.9
10
2
2
1
5
8
7
3
5
3
1
3
P D (W)
0.35
0.35
1.92
0.96
0.96
0.96
0.96
0.96
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
2.5
1.8
1.8
1.5
1.9
1.9
0.9
1.6
0.9
0.9
0.9
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
0.9