IRFP150N_R4942 Fairchild Semiconductor, IRFP150N_R4942 Datasheet - Page 4

• Manufacturer Part Number: IRFP150N_R4942
• Description: MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of IRFP150N_R4942

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 44 A
• Resistance Drain-source Rds (on): 0.03 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-247
• Fall Time: 61 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 155 W
• Rise Time: 75 ns
• Factory Pack Quantity: 150
• Typical Turn-off Delay Time: 37 ns

SC70-6 Complementary N- and P-Channel (cont.)
FDG6322C
SC70-6 P-Channel
FDG316P
FDG6304P
FDG6302P
FDG314P
FDG6308P
FDG6306P
FDG6318P
FDG6318PZ
FDG326P
FDG318P
FDG328P
FDG312P
FDG6316P
FDG330P
SuperSOT-3/SOT-23 N-Channel
FDN339AN
FDN371N
FDN327N
FDN335N
NDS335N
NDS331N
FDV305N
FDV303N
FDV301N
FDN359AN
FDN337N
FDN357N
NDS355AN
NDS355N
FDN361AN
NDS351AN
NDS351N
FDN372S
BSS138
FDN5630
2N7002MTF
MMBF170
NDS7002A
2N7000
2N7002
BSS123
SuperSOT-3/SOT-23 P-Channel
NDS0605
FDN5618P
NDS0610
BSS84
FDN360P
NDH8502P
FDN358P
NDS356AP
SC75-6 FLMP P-Channel
FDJ129P
Products
2
Min (V)
BV DSS
100
-25
-30
-25
-25
-25
-20
-20
-20
-20
-20
-20
-20
-20
-12
-12
-20
-60
-60
-60
-50
-30
-30
-30
-30
25
20
20
20
20
20
20
20
25
25
30
30
30
30
30
30
30
30
30
50
60
60
60
60
60
60
Complementary
Configuration
SyncFET
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Use FDG328P
Use NDS355AN
Use NDS351AN
Use FDN360P
0.046
0.085
0.125
0.19
0.06
0.16
0.04
0.17
0.03
10V
0.1
3.5
0.1
7.5
0.2
10
10
5
5
2
5
6
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
R DS(ON) Max. (Ohms) @ V GS =
0.145
0.035
0.065
0.125
0.125
4.5V
0.42
0.78
0.78
0.14
0.18
0.27
0.07
0.05
0.07
0.07
0.16
0.22
0.45
0.06
0.09
0.15
0.25
0.05
0.23
0.11
0.11
1.1
0.3
1.1
1.1
0.4
5.3
7.5
0.2
0.3
10
20
4
4
6
3
-
-
-
-
-
-
0.14@2.7V
0.21@2.7V
1.5@2.7V
1.5@2.7V
1.5@2.7V
0.6@2.7V
13@2.7V
5@2.7V
5@2.7V
0.082
2.5V
0.55
0.63
0.18
0.21
0.25
0.36
0.15
0.12
0.05
0.06
0.08
1.2
1.2
0.1
0.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.215
0.25
0.65
0.12
1.8V
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
@ V GS = 5V
Q g (nC) Typ
(Note pg. i)
0.22
0.86
1.08
1.64
0.49
1.1
1.4
3.5
1.1
1.1
1.8
1.4
4.4
3.7
3.3
1.7
7.6
4.5
3.5
6.4
3.5
1.1
4.2
3.5
2.1
1.9
5.8
1.7
1.7
1.7
1.7
1.7
1.4
1.8
8.6
1.8
0.9
6.2
3.4
5
4
7
5
7
7
4
-
Maximum Rating
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I D (A)
0.115
0.22
0.41
0.41
0.14
0.65
0.68
0.22
0.22
0.28
0.12
0.17
0.18
0.12
0.13
1.6
0.6
0.6
0.5
0.5
1.5
1.5
1.2
0.7
4.2
2.5
1.7
1.7
1.3
0.9
2.7
2.2
1.9
1.7
1.8
1.2
2.6
1.7
0.5
0.2
1.2
1.5
1.1
2
3
2
2
P D (W)
0.75
0.75
0.75
0.75
0.75
0.75
0.35
0.35
0.35
0.36
0.36
0.36
0.36
0.36
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
1.6
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.2
0.3
0.3
0.4
0.2
0.5
0.5
0.5
0.5