FCD380N60E Fairchild Semiconductor, FCD380N60E Datasheet - Page 6
FCD380N60E
Manufacturer Part Number
FCD380N60E
Description
MOSFET 600V N-Channel MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.FCD380N60E.pdf
(9 pages)
Specifications of FCD380N60E
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
10.2 A
Resistance Drain-source Rds (on)
380 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
D-PAK
Fall Time
10 ns
Forward Transconductance Gfs (max / Min)
10 S
Gate Charge Qg
34 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
106 W
Rise Time
9 ns
Typical Turn-off Delay Time
64 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FCD380N60E
Manufacturer:
INTEL
Quantity:
1 000
Part Number:
FCD380N60E
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2012 Fairchild Semiconductor Corporation
www.fairchildsemi.com
6
FCD380N60E Rev. C1