FCD380N60E Fairchild Semiconductor, FCD380N60E Datasheet

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FCD380N60E

Manufacturer Part Number
FCD380N60E
Description
MOSFET 600V N-Channel MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FCD380N60E

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
10.2 A
Resistance Drain-source Rds (on)
380 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
D-PAK
Fall Time
10 ns
Forward Transconductance Gfs (max / Min)
10 S
Gate Charge Qg
34 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
106 W
Rise Time
9 ns
Typical Turn-off Delay Time
64 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FCD380N60E
Manufacturer:
INTEL
Quantity:
1 000
Part Number:
FCD380N60E
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2012 Fairchild Semiconductor Corporation
FCD380N60E Rev. C1
MOSFET Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
FCD380N60E
N-Channel SuperFET
600 V, 10.2 A, 380 mΩ
Features
• 650 V @T
• Max. R
• Ultra Low Gate Charge (Typ. Q
• Low Effective Output Capacitance (Typ. C
• 100% Avalanche Tested
D
DM
AR
J
L
DSS
GSS
AS
AR
D
θJC
θJA
, T
Symbol
Symbol
STG
DS(on)
J
= 150°C
= 380 mΩ
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
G
S
g
= 34 nC)
D-PAK
®
oss
T
II MOSFET
C
.eff = 97 pF)
= 25
D
Parameter
Parameter
- DC
- AC
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
o
C unless otherwise noted
C
= 25
o
C)
C
C
1
= 25
= 100
o
Description
SuperFET
eration of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-resis-
tance and lower gate charge performance.This advanced tech-
nology is tailored to minimize conduction loss, provide superior
switching performance, and withstand extreme dv/dt rate and
higher avalanche energy. Consequently, SuperFETII MOSFET is
suitable for various AC/DC power conversion for system minia-
turization and higher efficiency.
C
o
C)
o
C)
®
II MOSFET is Fairchild Semiconductor
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
FCD380N60E
FCD380N60E
-55 to +150
211.6
10.2
30.6
1.06
0.85
1.18
100
600
±20
±30
100
106
300
6.4
2.3
D
S
20
March 2013
www.fairchildsemi.com
®
’s first gen-
W/
o
Unit
V/ns
Unit
C/W
mJ
mJ
o
o
W
V
V
V
A
A
A
C
C
o
C

Related parts for FCD380N60E

FCD380N60E Summary of contents

Page 1

... R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2012 Fairchild Semiconductor Corporation FCD380N60E Rev. C1 ® II MOSFET Description SuperFET eration of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resis- tance and lower gate charge performance.This advanced tech- nology is tailored to minimize conduction loss, provide superior ...

Page 2

... ≤ 5.1 A, di/dt ≤ 200 A/μs, V ≤ Starting DSS 4. Essentially Independent of Operating Temperature Typical Characteristics ©2012 Fairchild Semiconductor Corporation FCD380N60E Rev. C1 Package Reel Size D-PAK 380 unless otherwise noted C Test Conditions mA ...

Page 3

... 1MHz C iss = shorted) C oss = rss = C gd 0.5 0 Drain-Source Voltage [V] DS ©2012 Fairchild Semiconductor Corporation FCD380N60E Rev. C1 Figure 2. Transfer Characteristics *Notes: μ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage V ...

Page 4

... Figure 11. Eoss vs. Drain to Source Voltage Switching Capability 100 200 300 V , Drain to Source Voltage [V] DS ©2012 Fairchild Semiconductor Corporation FCD380N60E Rev. C1 (Continued) Figure 8. On-Resistance Variation *Notes 10mA D 80 120 160 o C] Figure 10. Maximum Drain Current μ ...

Page 5

... Typical Performance Characteristics Figure 12. Transient Thermal Response Curve 2 1 0.5 0.2 0.1 0.05 0.02 0.1 0.01 Single pulse 0. ©2012 Fairchild Semiconductor Corporation FCD380N60E Rev. C1 (Continued *Notes θ 2. Duty Factor Rectangular Pulse Duration [sec (t) = 1.18 C/W Max (t) θ ...

Page 6

... Unclamped Inductive Switching Test Circuit & Waveforms ©2012 Fairchild Semiconductor Corporation FCD380N60E Rev. C1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2012 Fairchild Semiconductor Corporation FCD380N60E Rev. C1 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type ...

Page 8

... Mechanical Dimensions ©2012 Fairchild Semiconductor Corporation FCD380N60E Rev. C1 D-PAK 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2012 Fairchild Semiconductor Corporation FCD380N60E Rev. C1 ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

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