FCD380N60E Fairchild Semiconductor, FCD380N60E Datasheet - Page 2

• Manufacturer Part Number: FCD380N60E
• Description: MOSFET 600V N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FCD380N60E

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 10.2 A
• Resistance Drain-source Rds (on): 380 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D-PAK
• Fall Time: 10 ns
• Forward Transconductance Gfs (max / Min): 10 S
• Gate Charge Qg: 34 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 106 W
• Rise Time: 9 ns
• Typical Turn-off Delay Time: 64 ns

©2012 Fairchild Semiconductor Corporation
FCD380N60E Rev. C1
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
3. I
4. Essentially Independent of Operating Temperature Typical Characteristics
BV
ΔBV
BV
I
I
V
R
g
C
C
C
C
C
Q
Q
Q
ESR
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
ΔT
FS
GS(th)
DS(on)
iss
oss
rss
oss
oss
SD
g(tot)
gs
gd
rr
AS
SD
Device Marking
Symbol
DSS
DS
J
FCD380N60E
= 2.3 A, V
DSS
≤ 5.1 A, di/dt ≤ 200 A/μs, V
eff.
DD
= 50 V, R
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
G
= 25 Ω, Starting T
DD
FCD380N60E
≤ BV
Device
DSS
Parameter
, Starting T
J
= 25°C
T
J
C
= 25°C
= 25
o
C unless otherwise noted
Package
D-PAK
V
V
I
V
V
V
V
V
V
dI
V
V
V
V
f = 1 MHz
V
V
V
Drain open
V
V
D
V
GS
GS
GS
DS
DS
GS
GS
GS
DS
DD
GS
GS
GS
DS
DS
DS
DS
F
GS
= 10 mA, Referenced to 25
/dt = 100 A/μs
= 480 V, V
= 480 V, T
= 0V, I
= 0 V, I
= 0 V, I
= 0 V, I
= ±20 V, V
= 0V, I
= V
= 10 V, I
= 20 V, I
= 25 V, V
= 380 V, V
= 0 V to 480 V, V
= 380 V, I
= 380 V, I
= 10 V, R
= 10 V
DS
Test Conditions
, I
2
SD
SD
D
D
D
Reel Size
D
D
D
380 mm
= 10 mA, T
= 10 mA, T
= 10 A
GS
= 5 A
D
G
= 5 A
= 250 μA
D
C
= 5 A
= 5 A
GS
GS
DS
= 5 A
= 4.7 Ω
= 5 A
= 125
= 0 V
= 0 V
= 0 V
= 0V, f = 1.0 MHz
GS
o
C
J
J
= 0 V
= 25°C
= 150°C
o
(Note 4)
(Note 4)
C
Tape Width
16 mm
Min.
600
650
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1330
Typ.
0.67
0.32
240
700
945
5.3
10
60
25
97
34
13
17
64
10
3
6
9
-
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
±100
1770
1260
0.38
10.2
30.6
2500
138
3.5
1.2
20
90
45
44
28
30
5
-
-
-
-
-
-
-
-
-
-
-
-
V/
Unit
pF
pF
pF
pF
nC
nC
nC
μC
μA
nA
pF
ns
Ω
ns
ns
ns
ns
Ω
V
V
V
V
S
A
A
V
o
C