FCD380N60E Fairchild Semiconductor, FCD380N60E Datasheet - Page 4

• Manufacturer Part Number: FCD380N60E
• Description: MOSFET 600V N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FCD380N60E

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 10.2 A
• Resistance Drain-source Rds (on): 380 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D-PAK
• Fall Time: 10 ns
• Forward Transconductance Gfs (max / Min): 10 S
• Gate Charge Qg: 34 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 106 W
• Rise Time: 9 ns
• Typical Turn-off Delay Time: 64 ns

©2012 Fairchild Semiconductor Corporation
FCD380N60E Rev. C1
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Eoss vs. Drain to Source Voltage Switching Capability
1.16
1.12
1.08
1.04
1.00
0.96
0.92
0.88
0.01
100
0.1
6
5
4
3
2
1
0
10
-80
1
0
0.1
vs. Case Temperature
100
vs. Temperature
-40
Operation in This Area
is Limited by R
V
T
DS
J
V
, Junction Temperature [
, Drain to Source Voltage [V]
DS
1
*Notes:
, Drain-Source Voltage [V]
200
1. T
2. T
3. Single Pulse
0
C
J
= 150
= 25
DS(on)
300
40
o
10
o
C
C
10ms
400
80
*Notes:
1ms
1. V
2. I
DC
100
100
D
o
GS
C]
= 10mA
500
120
μ
= 0V
s
10
μ
600
160
s
1000
(Continued)
4
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
2.8
2.4
2.0
1.6
1.2
0.8
0.4
12
10
8
6
4
2
0
-80
25
vs. Temperature
-40
50
T
T
J
C
, Junction Temperature [
, Case Temperature [
0
75
40
100
80
o
*Notes:
C]
1. V
2. I
125
o
www.fairchildsemi.com
C]
D
120
GS
= 5A
= 10V
150
160