HUF76639S3ST_F085 Fairchild Semiconductor, HUF76639S3ST_F085 Datasheet - Page 9

• Manufacturer Part Number: HUF76639S3ST_F085
• Description: MOSFET 50A, 100V, 0.026 Ohm N-Channel UltraFET
• Manufacturer: Fairchild Semiconductor

Specifications of HUF76639S3ST_F085

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 50 A
• Resistance Drain-source Rds (on): 0.026 Ohms
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263AB
• Fall Time: 136 ns
• Gate Charge Qg: 86 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 180 W
• Rise Time: 207 ns
• Typical Turn-off Delay Time: 83 ns

SPICE Thermal Model
REV 26 July 1999
HUF76639T
CTHERM1 th 6 3.2e-3
CTHERM2 6 5 8.5e-3
CTHERM3 5 4 1.2e-2
CTHERM4 4 3 1.6e-2
CTHERM5 3 2 5.5e-2
CTHERM6 2 tl 1.5
RTHERM1 th 6 8.0e-3
RTHERM2 6 5 6.8e-2
RTHERM3 5 4 9.2e-2
RTHERM4 4 3 2.0e-1
RTHERM5 3 2 2.4e-1
RTHERM6 2 tl 5.2e-2
SABER Thermal Model
SABER thermal model HUF76639T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 3.2e-3
ctherm.ctherm2 6 5 = 8.5e-3
ctherm.ctherm3 5 4 = 1.2e-2
ctherm.ctherm4 4 3 = 1.6e-2
ctherm.ctherm5 3 2 = 5.5e-2
ctherm.ctherm6 2 tl = 1.5
rtherm.rtherm1 th 6 = 8.0e-3
rtherm.rtherm2 6 5 = 6.8e-2
rtherm.rtherm3 5 4 = 9.2e-2
rtherm.rtherm4 4 3 = 2.0e-1
rtherm.rtherm5 3 2 = 2.4e-1
rtherm.rtherm6 2 tl = 5.2e-2
}
©2012 Fairchild Semiconductor Corporation
RTHERM5
RTHERM2
RTHERM3
RTHERM6
RTHERM1
RTHERM4
th
5
4
3
2
tl
6
JUNCTION
CASE
CTHERM5
CTHERM2
CTHERM3
CTHERM6
CTHERM1
CTHERM4
HUF76639S3ST_F085 Rev. C1