HUF76639S3ST_F085 Fairchild Semiconductor, HUF76639S3ST_F085 Datasheet - Page 3

• Manufacturer Part Number: HUF76639S3ST_F085
• Description: MOSFET 50A, 100V, 0.026 Ohm N-Channel UltraFET
• Manufacturer: Fairchild Semiconductor

Specifications of HUF76639S3ST_F085

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 50 A
• Resistance Drain-source Rds (on): 0.026 Ohms
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263AB
• Fall Time: 136 ns
• Gate Charge Qg: 86 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 180 W
• Rise Time: 207 ns
• Typical Turn-off Delay Time: 83 ns

Typical Performance Curves
©2012 Fairchild Semiconductor Corporation
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
1000
1.2
1.0
0.8
0.6
0.4
0.2
100
50
0
0.01
0.1
10
0
2
1
-5
10
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-5
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
TEMPERATURE
25
V
GS
T
= 10V
C
50
, CASE TEMPERATURE (
SINGLE PULSE
10
75
10
-4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-4
100
V
GS
= 5V
125
o
C)
FIGURE 4. PEAK CURRENT CAPABILITY
10
10
-3
150
-3
t, RECTANGULAR PULSE DURATION (s)
175
t, PULSE WIDTH (s)
10
10
-2
-2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
60
50
40
30
20
10
0
25
CASE TEMPERATURE
50
10
10
V
-1
T
GS
-1
C
NOTES:
DUTY FACTOR: D = t
PEAK T
, CASE TEMPERATURE (
= 4.5V
75
J
V
GS
= P
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
T
100
DM
= 10V
C
I = I
= 25
x Z
25
o
10
10
C
P
JC
1
DM
o
0
0
/t
HUF76639S3ST_F085 Rev. C1
125
C DERATE PEAK
x R
2
o
175 - T
C)
JC
150
t
+ T
1
t
C
150
2
C
175
10
10
1
1