HUF76639S3ST_F085 Fairchild Semiconductor, HUF76639S3ST_F085 Datasheet - Page 5

• Manufacturer Part Number: HUF76639S3ST_F085
• Description: MOSFET 50A, 100V, 0.026 Ohm N-Channel UltraFET
• Manufacturer: Fairchild Semiconductor

Specifications of HUF76639S3ST_F085

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 50 A
• Resistance Drain-source Rds (on): 0.026 Ohms
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263AB
• Fall Time: 136 ns
• Gate Charge Qg: 86 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 180 W
• Rise Time: 207 ns
• Typical Turn-off Delay Time: 83 ns

Typical Performance Curves
©2012 Fairchild Semiconductor Corporation
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
400
300
200
100
5000
1000
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
100
1.2
1.0
0.8
0.6
0.4
0
40
0
-80
0.1
V
GS
V
GS
= 4.5V, V
JUNCTION TEMPERATURE
= 0V, f = 1MHz
-40
R
GS
10
V
T
DS
, GATE TO SOURCE RESISTANCE ( )
DD
J
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
= 50V, I
0
1
20
D
40
= 34A
t
C
t
f
r
RSS
80
30
V
GS
C
C
10
C
(Continued)
OSS
t
= V
ISS
GD
120
d(OFF)
DS
o
C
C)
, I
C
40
GS
DS
D
160
= 250 A
+ C
+ C
t
d(ON)
GD
GD
200
100
50
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
600
500
400
300
200
100
10
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
8
6
4
2
0
0
1.2
1.1
1.0
0.9
0
0
-80
V
V
GS
I
DD
D
VOLTAGE vs JUNCTION TEMPERATURE
GATE CURRENT
= 10V, V
= 250 A
= 50V
-40
R
15
GS
10
T
, GATE TO SOURCE RESISTANCE ( )
J
DD
, JUNCTION TEMPERATURE (
= 50V, I
Q
0
g
, GATE CHARGE (nC)
30
20
D
40
= 51A
80
WAVEFORMS IN
DESCENDING ORDER:
45
30
HUF76639S3ST_F085 Rev. C1
I
I
I
D
D
D
= 51A
= 35A
= 15A
120
o
C)
60
40
160
t
t
d(OFF)
f
t
d(ON)
t
r
200
50
75