2N7002PS,125 NXP Semiconductors, 2N7002PS,125 Datasheet - Page 9

• Manufacturer Part Number: 2N7002PS,125
• Description: MOSFET N-CH 60 V 320 mA
• Manufacturer: NXP Semiconductors

Specifications of 2N7002PS,125

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 320 mA
• Resistance Drain-source Rds (on): 1.6 Ohms
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Forward Transconductance Gfs (max / Min): 400 mS
• Gate Charge Qg: 0.8 nC
• Power Dissipation: 280 mW
• Factory Pack Quantity: 3000

NXP Semiconductors
2N7002PS
Product data sheet
Fig 14. Per transistor: Gate-source voltage as a
Fig 16. Per transistor: Source current as a function of source-drain voltage; typical values
V
(V)
(1) T
(2) T
GS
5.0
4.0
3.0
2.0
1.0
0.0
0.0
I
function of gate charge; typical values
V
D
amb
amb
GS
= 300 mA; V
= 0 V
= 150 °C
= 25 °C
0.2
DS
= 30 V; T
0.4
amb
(A)
I
S
= 25 °C
1.2
0.8
0.4
0.0
0.6
0.0
All information provided in this document is subject to legal disclaimers.
Q
017aaa025
G
(nC)
0.8
Rev. 1 — 1 July 2010
0.4
Fig 15. Per transistor: Gate charge waveform
(1)
0.8
V
definitions
(2)
V
SD
V
V
V
GS(pl)
017aaa026
DS
GS(th)
GS
60 V, 320 mA N-channel Trench MOSFET
(V)
1.2
Q
GS1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
2N7002PS
© NXP B.V. 2010. All rights reserved.
003aaa508
9 of 16