2N7002P,215 NXP Semiconductors, 2N7002P,215 Datasheet
2N7002P,215
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2N7002P,215 Summary of contents
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V, 360 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. ...
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... NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain 3. Ordering information Table 3. Ordering information Type number Package Name 2N7002P TO-236AB 4. Marking Table 4. Marking codes Type number 2N7002P [ made in Hong Kong made in Hong Kong made in Malaysia made in China 5 ...
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... NXP Semiconductors [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 120 P der (%) −75 − Fig 1. Normalized total power dissipation as a function of ambient temperature (A) 1 −1 10 −2 10 −3 10 − single pulse DM = 100 μ 100 ms p (5) DC °C sp (6) DC °C; drain mounting pad 1 cm amb Fig 3 ...
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... NXP Semiconductors 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter R thermal resistance th(j-a) from junction to ambient R thermal resistance th(j-sp) from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm ...
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... NXP Semiconductors 7. Characteristics Table 7. Characteristics Symbol Parameter Static characteristics V drain-source (BR)DSS breakdown voltage V gate-source threshold GSth voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance g forward fs transconductance Dynamic characteristics Q total gate charge G(tot) Q gate-source charge GS Q gate-drain charge ...
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... NXP Semiconductors 0 4 (A) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 1.0 2 °C amb Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values 10.0 R DSon (Ω) (1) 7.5 5.0 2.5 0.0 0.0 0.2 0.4 0 °C amb ( Fig 8. Drain-source on-state resistance as a function of drain current ...
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... NXP Semiconductors 1 (A) 0.8 0.6 0.4 0.2 (2) (1) 0.0 0.0 1.0 2.0 3.0 V > I × DSon ( °C amb ( 150 °C amb Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 3.0 V GS(th) (1) (V) 2.0 (2) (3) 1.0 0.0 − 0.25 mA; V ...
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... NXP Semiconductors 5 (V) 4.0 3.0 2.0 1.0 0.0 0.0 0.2 0 300 mA Fig 14. Gate-source voltage as a function of gate charge; typical values ( 150 °C amb ( °C amb Fig 16. Source current as a function of source-drain voltage; typical values 2N7002P Product data sheet 017aaa025 0.6 0.8 ...
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... NXP Semiconductors 8. Test information Fig 17. Duty cycle definition 2N7002P Product data sheet 60 V, 360 mA N-channel Trench MOSFET duty cycle δ 006aaa812 All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 2N7002P © NXP B.V. 2010. All rights reserved. ...
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... NXP Semiconductors 9. Package outline Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 Fig 18. Package outline SOT23 (TO-236AB) 2N7002P Product data sheet scale 3.0 1.4 2.5 0.45 1.9 ...
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... NXP Semiconductors 10. Soldering 3 1.7 0.7 (3×) Fig 19. Reflow soldering footprint for SOT23 (TO-236AB) 1.4 (2×) 4.6 2.6 1.4 Fig 20. Wave soldering footprint for SOT23 (TO-236AB) 2N7002P Product data sheet 3.3 2.9 1.9 2 0.6 (3×) 0.5 (3×) 0.6 (3×) 1 2.2 1.2 (2×) preferred transport direction during soldering 2 ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date 2N7002P v.2 20100729 • Modifications: Correction of thermal values. • Correction of various characteristics values including related graphs. 2N7002P_1 20100419 2N7002P Product data sheet 60 V, 360 mA N-channel Trench MOSFET Data sheet status Change notice ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...
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... NXP Semiconductors No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations ...
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... NXP Semiconductors 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . .9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 Revision history ...