2N7002PS,125 NXP Semiconductors, 2N7002PS,125 Datasheet - Page 2

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2N7002PS,125

Manufacturer Part Number
2N7002PS,125
Description
MOSFET N-CH 60 V 320 mA
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 2N7002PS,125

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Continuous Drain Current
320 mA
Resistance Drain-source Rds (on)
1.6 Ohms
Mounting Style
SMD/SMT
Package / Case
SOT-363
Forward Transconductance Gfs (max / Min)
400 mS
Gate Charge Qg
0.8 nC
Power Dissipation
280 mW
Factory Pack Quantity
3000

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N7002PS,125
Manufacturer:
NXP
Quantity:
120 000
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
2N7002PS
Product data sheet
Table 2.
Table 3.
Table 4.
[1]
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
4
5
6
Type number Package
2N7002PS
Type number
2N7002PS
Symbol
Per transistor
V
V
I
I
D
DM
DS
GS
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Symbol
S1
G1
D2
S2
G2
D1
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
Pinning
Ordering information
Marking codes
Limiting values
Name
SC-88
All information provided in this document is subject to legal disclaimers.
Description
source1
gate1
drain2
source2
gate2
drain1
Rev. 1 — 1 July 2010
Description
plastic surface-mounted package; 6 leads
T
T
V
Conditions
T
single pulse; t
amb
amb
amb
GS
T
T
amb
amb
= 10 V
= 25 °C
= 25 °C
= 25 °C;
= 25 °C
= 100 °C
Marking code
M8*
Simplified outline
60 V, 320 mA N-channel Trench MOSFET
p
≤ 10 μs
1
6
5
2
[1]
[1]
4
3
Min
-
-
-
-
-
Graphic symbol
2N7002PS
© NXP B.V. 2010. All rights reserved.
Max
60
±20
320
240
1.2
D
S
1
1
G
1
Version
SOT363
D
S
Unit
V
V
mA
mA
A
2
2
msd901
G
2 of 16
2

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