2N7002PS,125 NXP Semiconductors, 2N7002PS,125 Datasheet - Page 10

• Manufacturer Part Number: 2N7002PS,125
• Description: MOSFET N-CH 60 V 320 mA
• Manufacturer: NXP Semiconductors

Specifications of 2N7002PS,125

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 320 mA
• Resistance Drain-source Rds (on): 1.6 Ohms
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Forward Transconductance Gfs (max / Min): 400 mS
• Gate Charge Qg: 0.8 nC
• Power Dissipation: 280 mW
• Factory Pack Quantity: 3000

NXP Semiconductors
8. Test information
2N7002PS
Product data sheet
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 17. Duty cycle definition
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 July 2010
P
t
1
t
2
duty cycle δ =
60 V, 320 mA N-channel Trench MOSFET
006aaa812
t
t
t
1
2
2N7002PS
© NXP B.V. 2010. All rights reserved.
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