2N7002PS,125 NXP Semiconductors, 2N7002PS,125 Datasheet - Page 12

• Manufacturer Part Number: 2N7002PS,125
• Description: MOSFET N-CH 60 V 320 mA
• Manufacturer: NXP Semiconductors

Specifications of 2N7002PS,125

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 320 mA
• Resistance Drain-source Rds (on): 1.6 Ohms
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Forward Transconductance Gfs (max / Min): 400 mS
• Gate Charge Qg: 0.8 nC
• Power Dissipation: 280 mW
• Factory Pack Quantity: 3000

NXP Semiconductors
10. Soldering
2N7002PS
Product data sheet
Fig 19. Reflow soldering footprint SOT363 (SC-88)
Fig 20. Wave soldering footprint SOT363 (SC-88)
4.5
2.35
1.5
All information provided in this document is subject to legal disclaimers.
1.3
(4×)
0.6
(4×)
0.5
2.45
5.3
Rev. 1 — 1 July 2010
(4×)
(4×)
0.5
0.6
1.3
2.65
1.8
(2×)
0.6
1.5
1.5
60 V, 320 mA N-channel Trench MOSFET
0.4 (2×)
0.3
2.5
Dimensions in mm
2N7002PS
direction during soldering
Dimensions in mm
© NXP B.V. 2010. All rights reserved.
solder lands
solder resist
solder paste
occupied area
preferred transport
sot363_fr
solder lands
solder resist
occupied area
sot363_fw
12 of 16