2N7002P NXP Semiconductors, 2N7002P Datasheet
2N7002P
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2N7002P Summary of contents
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... V, 360 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits AEC-Q101 qualified Logic-level compatible 1 ...
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... GS amb 100 °C GS amb °C; single pulse; t amb °C amb ° °C amb All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 2N7002P Graphic symbol mbb076 Version SOT23 Min Max - 60 -20 20 [1] - 360 [1] - 280 ≤ 10 µ ...
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... I der (%) −75 125 175 T (°C) amb Fig 2. Normalized continuous drain current as a function of ambient temperature 1 2 All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 2N7002P 017aaa002 − 125 175 T (°C) amb 017aaa014 (1) (2) (3) (4) (5) ( (V) DS © ...
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... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2N7002P Product data sheet 60 V, 360 mA N-channel Trench MOSFET Conditions in free air − − All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 2N7002P Min Typ Max [1] - 310 370 [2] - 260 300 - - 115 2 ...
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... I = 300 mA 4 ° MHz ° 250 Ω Ω °C G(ext 115 mA ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 2N7002P Min Typ Max Unit 1.1 1.75 2 µ µ 100 100 nA Ω - 1.3 2 Ω 1.6 - 400 - mS - ...
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... I ( (1) T (2) T Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 2N7002P 60 V, 360 mA N-channel Trench MOSFET 017aaa018 (1) ( ° amb DS 017aaa020 (1) (2) 2 ...
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... MHz; V (1) C (2) C (3) C Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 2N7002P 60 V, 360 mA N-channel Trench MOSFET 017aaa022 0 60 120 T (°C) amb 017aaa024 ...
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... Q (nC °C amb Fig 15. Gate charge waveform definitions 1 (A) 0.8 (1) 0.4 0.0 0.0 0.4 0.8 V All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 2N7002P 60 V, 360 mA N-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) 003aaa508 ...
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... NXP Semiconductors 8. Test information Fig 17. Duty cycle definition 2N7002P Product data sheet 60 V, 360 mA N-channel Trench MOSFET duty cycle δ 006aaa812 All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 2N7002P © NXP B.V. 2010. All rights reserved ...
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... 3.0 1.4 2.5 0.45 1.9 0.95 2.8 1.2 2.1 0.15 REFERENCES JEDEC JEITA TO-236AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 2N7002P 60 V, 360 mA N-channel Trench MOSFET detail 0.55 0.2 0.1 0.45 EUROPEAN ISSUE DATE PROJECTION ...
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... All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 2N7002P 60 V, 360 mA N-channel Trench MOSFET solder lands solder resist solder paste occupied area Dimensions in mm sot023_fr solder lands ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date 2N7002P v.2 20100729 • Modifications: Correction of thermal values. • Correction of various characteristics values including related graphs. 2N7002P_1 20100419 2N7002P Product data sheet 60 V, 360 mA N-channel Trench MOSFET Data sheet status Change notice ...
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... NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 2N7002P 60 V, 360 mA N-channel Trench MOSFET © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 July 2010 2N7002P 60 V, 360 mA N-channel Trench MOSFET © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com 2N7002P All rights reserved. Date of release: 29 July 2010 Document identifier: 2N7002P ...