2N7002PS,125 NXP Semiconductors, 2N7002PS,125 Datasheet - Page 15

• Manufacturer Part Number: 2N7002PS,125
• Description: MOSFET N-CH 60 V 320 mA
• Manufacturer: NXP Semiconductors

Specifications of 2N7002PS,125

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 320 mA
• Resistance Drain-source Rds (on): 1.6 Ohms
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Forward Transconductance Gfs (max / Min): 400 mS
• Gate Charge Qg: 0.8 nC
• Power Dissipation: 280 mW
• Factory Pack Quantity: 3000

NXP Semiconductors
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13. Contact information
For more information, please visit:
For sales office addresses, please send an email to:
2N7002PS
Product data sheet
http://www.nxp.com
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 July 2010
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12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
60 V, 320 mA N-channel Trench MOSFET
2N7002PS
© NXP B.V. 2010. All rights reserved.
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