2N7002PS,125 NXP Semiconductors, 2N7002PS,125 Datasheet - Page 5

• Manufacturer Part Number: 2N7002PS,125
• Description: MOSFET N-CH 60 V 320 mA
• Manufacturer: NXP Semiconductors

Specifications of 2N7002PS,125

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 320 mA
• Resistance Drain-source Rds (on): 1.6 Ohms
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Forward Transconductance Gfs (max / Min): 400 mS
• Gate Charge Qg: 0.8 nC
• Power Dissipation: 280 mW
• Factory Pack Quantity: 3000

NXP Semiconductors
2N7002PS
Product data sheet
Fig 4.
Fig 5.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
1
1
3
2
3
2
10
10
FR4 PCB, standard footprint
typical values
FR4 PCB, mounting pad for drain 1 cm
typical values
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
−3
−3
duty cycle = 1
duty cycle = 1
0.25
0.25
0.5
0.1
0.5
0.1
0
0
0.75
0.33
0.05
0.75
0.33
0.05
0.02
0.01
0.2
0.02
0.01
0.2
10
10
−2
−2
All information provided in this document is subject to legal disclaimers.
10
10
2
−1
−1
Rev. 1 — 1 July 2010
1
1
60 V, 320 mA N-channel Trench MOSFET
10
10
10
10
2
2
2N7002PS
t
t
p
p
© NXP B.V. 2010. All rights reserved.
(s)
(s)
017aaa034
017aaa035
10
10
3
3
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