FDB38N30U Fairchild Semiconductor, FDB38N30U Datasheet - Page 6

• Manufacturer Part Number: FDB38N30U
• Description: MOSFET N-Channel UniFETTM Ultra FRFETTM MOSFET 300V, 38A, 120m
• Manufacturer: Fairchild Semiconductor

Specifications of FDB38N30U

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 38 A
• Resistance Drain-source Rds (on): 0.103 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Fall Time: 62 ns
• Forward Transconductance Gfs (max / Min): 30 S
• Gate Charge Qg: 56 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 313 W
• Rise Time: 80 ns
• Typical Turn-off Delay Time: 133 ns

FDB38N30U Rev. C0
( Driver )
( Driver )
( DUT )
( DUT )
( DUT )
( DUT )
V
V
I
I
V
V
GS
GS
SD
SD
DS
DS
V
V
GS
GS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
R
R
G
G
Driver
Driver
DUT
DUT
I
I
FM
FM
I
I
D =
D =
D =
SD
SD
, Body Diode Forward Current
, Body Diode Forward Current
Forward Voltage Drop
Forward Voltage Drop
--------------------------
--------------------------
--------------------------
Gate Pulse Width
Gate Pulse Width
Gate Pulse Width
Gate Pulse Period
Gate Pulse Period
Gate Pulse Period
Body Diode
Body Diode
Same Type
Same Type
V
V
Body Diode Recovery dv/dt
Body Diode Recovery dv/dt
+
+
as DUT
as DUT
_
_
DS
DS
• dv/dt controlled by R
• dv/dt controlled by R
• I
• I
V
V
SD
SD
SD
SD
Body Diode Reverse Current
Body Diode Reverse Current
controlled by pulse period
controlled by pulse period
6
I
I
RM
RM
L
L L
G
G
di/dt
di/dt
V
V
V
V
10V
10V
DD
DD
DD
DD
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