FDB38N30U Fairchild Semiconductor, FDB38N30U Datasheet - Page 5
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FDB38N30U
Manufacturer Part Number
FDB38N30U
Description
MOSFET N-Channel UniFETTM Ultra FRFETTM MOSFET 300V, 38A, 120m
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDB38N30U.pdf
(8 pages)
Specifications of FDB38N30U
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
38 A
Resistance Drain-source Rds (on)
0.103 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
D2PAK
Fall Time
62 ns
Forward Transconductance Gfs (max / Min)
30 S
Gate Charge Qg
56 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
313 W
Rise Time
80 ns
Typical Turn-off Delay Time
133 ns
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
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FDB38N30U Rev. C0