FDB38N30U Fairchild Semiconductor, FDB38N30U Datasheet - Page 4

• Manufacturer Part Number: FDB38N30U
• Description: MOSFET N-Channel UniFETTM Ultra FRFETTM MOSFET 300V, 38A, 120m
• Manufacturer: Fairchild Semiconductor

Specifications of FDB38N30U

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 38 A
• Resistance Drain-source Rds (on): 0.103 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Fall Time: 62 ns
• Forward Transconductance Gfs (max / Min): 30 S
• Gate Charge Qg: 56 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 313 W
• Rise Time: 80 ns
• Typical Turn-off Delay Time: 133 ns

FDB38N30U Rev. C0
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Drain Current
1.2
1.1
1.0
0.9
0.8
40
30
20
10
0
-80
25
R
θ
JC
vs. Temperature
-40
= 0.4
vs. Case Temperature
50
T
T
C
J
, Junction Temperature [
o
, Case Temperature [
C/W
0
1E-3
0.01
0.1
75
1
10
0.02
Single pulse
-5
0.5
0.1
0.05
0.01
0.2
40
Figure 11. Transient Thermal Response Curve
100
80
o
*Notes:
C]
1. V
2. I
10
o
125
V
C]
-4
D
120
GS
GS
= 1mA
= 10V
= 0V
Rectangular Pulse Duration [sec]
160
150
(Continued)
10
-3
4
Figure 8. Maximum Safe Operating Area
Figure 10. Unclamped Inductive
300
100
10
100
0.1
10
10
-2
1
0.001
1
1
*Notes:
Operation in This Area
is Limited by R
1. Z
2. Duty Factor, D= t
3. T
P
DM
Switching Capability
θ
JM
*Notes:
JC
0.01
1. T
2. T
3. Single Pulse
V
- T
(t) = 0.4
DS
t
10
AV
C
C
J
, Drain-Source Voltage [V]
= P
, TIME IN AVALANCHE (ms)
-1
= 150
t
= 25
T
1
t
J
2
o
DM
10
DS(on)
= 125
C/W Max.
o
0.1
C
o
* Z
C
1
θ
/t
o
JC
C
2
(t)
1
1
T
J
= 25
100
o
100
10ms
1ms
C
10
DC
μ
www.fairchildsemi.com
30
s
μ
s
500
100