FDB38N30U Fairchild Semiconductor, FDB38N30U Datasheet - Page 2

• Manufacturer Part Number: FDB38N30U
• Description: MOSFET N-Channel UniFETTM Ultra FRFETTM MOSFET 300V, 38A, 120m
• Manufacturer: Fairchild Semiconductor

Specifications of FDB38N30U

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 38 A
• Resistance Drain-source Rds (on): 0.103 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Fall Time: 62 ns
• Forward Transconductance Gfs (max / Min): 30 S
• Gate Charge Qg: 56 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 313 W
• Rise Time: 80 ns
• Typical Turn-off Delay Time: 133 ns

FDB38N30U Rev. C0
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 1mH, I
3: I
4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
BV
ΔBV
I
I
V
R
g
C
C
C
Q
Q
Q
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
FS
GS(th)
DS(on)
iss
oss
rss
SD
ΔT
g(tot)
gs
gd
rr
SD
Device Marking
Symbol
DSS
DSS
J
FDB38N30U
≤ 38A, di/dt ≤ 200A/μs, V
AS
= 38A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 50V, R
DD
≤ BV
FDB38N30U
G
= 25Ω, Starting T
DSS
Device
Parameter
, Starting T
J
T
= 25°C
C
J
= 25°C
= 25
o
C unless otherwise noted
Package
D2-PAK
I
I
V
V
V
V
V
dI
V
V
V
V
R
V
f = 1MHz
V
V
D
D
DS
DS
GS
DD
GS
GS
GS
GS
DS
DS
DS
GS
G
F
= 250μA, V
= 250μA, Referenced to 25
/dt = 100A/μs
= 25Ω
= 300V, V
= 240V, T
= ±30V, V
= 20V, I
= 0V, I
= 0V, I
= V
= 10V, I
= 25V, V
= 240V, I
= 10V
= 150V, I
DS
Test Conditions
, I
2
SD
SD
D
Reel Size
D
D
GS
D
330mm
GS
D
= 19A
= 38A
= 38A
GS
C
= 19A
DS
= 250μA
= 38A
= 38A
= 125
= 0V
= 0V, T
= 0V
= 0V
o
C
J
= 25
(Note 4, 5)
(Note 4, 5)
o
(Note 4)
(Note 4)
o
C
C
Tape Width
24mm
Min.
300
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.097
0.103
2510
Typ.
0.33
133
470
33
80
62
60
30
55
56
14
24
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
0.120
±100
3340
170
276
134
250
625
152
5.0
1.4
25
85
73
76
38
800
-
-
-
-
-
-
-
Units
V/
nC
nC
nC
μA
nA
pF
pF
pF
ns
ns
ns
ns
ns
μC
Ω
V
V
S
A
A
V
o
C